We have used ion implantation to dope polycrystalline BaxSr(1−x)TiO3 (BST) thin films with Mn. Dopant concentrations were varied in the range of 0.1 at % to 2 at % Mn. X-ray diffraction and TEM studies show that the implantation process significantly damages the film leaving only short range order, but subsequent rapid thermal annealing heals the damage. The effect of the different Mn dopant concentrations on the electrical properties of the complex capacitance, relaxation currents, leakage, C-V, and resistance degradation was investigated. Our initial results show that the implanted films have significantly lower leakage (up to a factor of 10 lower) than the as deposited films for small (<0.5 at % Mn) implantation doses. The capacitance decreased with increasing Mn concentration while the relaxation currents and loss tangents increased.