The Raman spectra of low and highly degenerate InN films grown by conventional Molecular Beam Epitaxy (MBE) and Plasma Source Molecular Beam Epitaxy (PSMBE) have been studied using visible (514.5 nm) and near infrared (785 nm) excitation wavelengths. The MBE grown InN films have a low electron carrier concentration, n
e < 2.0 × 1019 cm−3, exhibiting an optical bandgap absorption edge of 0.6 to 0.7 eV. On the other hand PSMBE grown InN samples are highly degenerate with ne > 3 × 1020 cm−3 with an observed optical bandgap ranging from 1.5 to 1.9 eV. Raman spectra of low degenerate InN films show sharp E2 and A1(LO) modes whereas spectra of highly degenerate InN films show rather broad features indicating the presence of a large number of structural defects. In the latter samples a resonance enhanced Raman scattering is observed especially with 785 nm excitation energy, where the excitation energy matches the optical energy bandgap. Another interesting observation is that the expected coupled plasmon LO-phonon modes are not detected in these films, rather a phonon mode is observed at the location of the unscreened A1(LO) mode. The observation of unscreened LO-phonon, and the absence of coupled plasmon LO-phonon modes have been attributed to Landau damping of the higher energy mode and coupling of the lower energy mode with the electron-hole pair excitations leading to the emergence of a mode very close to the A1(LO) mode.