The COllaborative project of Development of Anthropometrical measures in Twins (CODATwins) project is a large international collaborative effort to analyze individual-level phenotype data from twins in multiple cohorts from different environments. The main objective is to study factors that modify genetic and environmental variation of height, body mass index (BMI, kg/m2) and size at birth, and additionally to address other research questions such as long-term consequences of birth size. The project started in 2013 and is open to all twin projects in the world having height and weight measures on twins with information on zygosity. Thus far, 54 twin projects from 24 countries have provided individual-level data. The CODATwins database includes 489,981 twin individuals (228,635 complete twin pairs). Since many twin cohorts have collected longitudinal data, there is a total of 1,049,785 height and weight observations. For many cohorts, we also have information on birth weight and length, own smoking behavior and own or parental education. We found that the heritability estimates of height and BMI systematically changed from infancy to old age. Remarkably, only minor differences in the heritability estimates were found across cultural–geographic regions, measurement time and birth cohort for height and BMI. In addition to genetic epidemiological studies, we looked at associations of height and BMI with education, birth weight and smoking status. Within-family analyses examined differences within same-sex and opposite-sex dizygotic twins in birth size and later development. The CODATwins project demonstrates the feasibility and value of international collaboration to address gene-by-exposure interactions that require large sample sizes and address the effects of different exposures across time, geographical regions and socioeconomic status.

Oldowan sites in primary geological context are rare in the archaeological record. Here we describe the depositional environment of Oldowan occurrences at Kanjera South, Kenya, based on field descriptions and granulometric analysis. Excavations have recovered a large Oldowan artefact sample as well as the oldest substantial sample of archaeological fauna. The deposits at Kanjera South consist of 30 m of fluvial, colluvial and lacustrine sediments. Magneto- and biostratigraphy indicate the Kanjera South Member of the Kanjera Formation was deposited during 2.3–1.92 Ma, with 2.0 Ma being a likely age for the archaeological occurrences. Oldowan artefacts and associated fauna were deposited in the colluvial and alluvial silts and sands of beds KS1–3, in the margins of a lake basin. Field descriptions and granulometric analysis of the sediment fine fraction indicate that sediments from within the main archaeological horizon were emplaced as a combination of tractional and hyperconcentrated flows with limited evidence of debris-flow deposition. This style of deposition is unlikely to significantly erode or disturb the underlying surface, and therefore promotes preservation of surface archaeological accumulations. Hominins were repeatedly attracted to the site locale, and rapid sedimentation, minimal bone weathering and an absence of bone or artefact rounding further indicate that fossils and artefacts were quickly buried.

The National Institute of Standards and Technology (NIST) certifies a suite of Standard Reference Materials (SRMs) to address specific aspects of the performance of X-ray powder diffraction instruments. This report describes SRM 1879b, the third generation of this powder diffraction SRM. SRM 1879b is intended for use in the preparation of calibration standards for the quantitative analyses of cristobalite by X-ray powder diffraction in accordance with National Institute for Occupational Safety and Health (NIOSH) Analytical Method 7500, or equivalent. A unit of SRM 1879b consists of approximately 5 g of cristobalite powder bottled in an argon atmosphere. It is certified with respect to crystalline phase purity, or amorphous phase content, and lattice parameter. Neutron powder diffraction, both time-of-flight and constant wavelength, was used to certify the phase purity using SRM 676a as an internal standard. A NIST-built diffractometer, incorporating many advanced design features was used for certification measurements for lattice parameters.

Whether monozygotic (MZ) and dizygotic (DZ) twins differ from each other in a variety of phenotypes is important for genetic twin modeling and for inferences made from twin studies in general. We analyzed whether there were differences in individual, maternal and paternal education between MZ and DZ twins in a large pooled dataset. Information was gathered on individual education for 218,362 adult twins from 27 twin cohorts (53% females; 39% MZ twins), and on maternal and paternal education for 147,315 and 143,056 twins respectively, from 28 twin cohorts (52% females; 38% MZ twins). Together, we had information on individual or parental education from 42 twin cohorts representing 19 countries. The original education classifications were transformed to education years and analyzed using linear regression models. Overall, MZ males had 0.26 (95% CI [0.21, 0.31]) years and MZ females 0.17 (95% CI [0.12, 0.21]) years longer education than DZ twins. The zygosity difference became smaller in more recent birth cohorts for both males and females. Parental education was somewhat longer for fathers of DZ twins in cohorts born in 1990–1999 (0.16 years, 95% CI [0.08, 0.25]) and 2000 or later (0.11 years, 95% CI [0.00, 0.22]), compared with fathers of MZ twins. The results show that the years of both individual and parental education are largely similar in MZ and DZ twins. We suggest that the socio-economic differences between MZ and DZ twins are so small that inferences based upon genetic modeling of twin data are not affected.

We analyzed birth order differences in means and variances of height and body mass index (BMI) in monozygotic (MZ) and dizygotic (DZ) twins from infancy to old age. The data were derived from the international CODATwins database. The total number of height and BMI measures from 0.5 to 79.5 years of age was 397,466. As expected, first-born twins had greater birth weight than second-born twins. With respect to height, first-born twins were slightly taller than second-born twins in childhood. After adjusting the results for birth weight, the birth order differences decreased and were no longer statistically significant. First-born twins had greater BMI than the second-born twins over childhood and adolescence. After adjusting the results for birth weight, birth order was still associated with BMI until 12 years of age. No interaction effect between birth order and zygosity was found. Only limited evidence was found that birth order influenced variances of height or BMI. The results were similar among boys and girls and also in MZ and DZ twins. Overall, the differences in height and BMI between first- and second-born twins were modest even in early childhood, while adjustment for birth weight reduced the birth order differences but did not remove them for BMI.

A trend toward greater body size in dizygotic (DZ) than in monozygotic (MZ) twins has been suggested by some but not all studies, and this difference may also vary by age. We analyzed zygosity differences in mean values and variances of height and body mass index (BMI) among male and female twins from infancy to old age. Data were derived from an international database of 54 twin cohorts participating in the COllaborative project of Development of Anthropometrical measures in Twins (CODATwins), and included 842,951 height and BMI measurements from twins aged 1 to 102 years. The results showed that DZ twins were consistently taller than MZ twins, with differences of up to 2.0 cm in childhood and adolescence and up to 0.9 cm in adulthood. Similarly, a greater mean BMI of up to 0.3 kg/m2 in childhood and adolescence and up to 0.2 kg/m2 in adulthood was observed in DZ twins, although the pattern was less consistent. DZ twins presented up to 1.7% greater height and 1.9% greater BMI than MZ twins; these percentage differences were largest in middle and late childhood and decreased with age in both sexes. The variance of height was similar in MZ and DZ twins at most ages. In contrast, the variance of BMI was significantly higher in DZ than in MZ twins, particularly in childhood. In conclusion, DZ twins were generally taller and had greater BMI than MZ twins, but the differences decreased with age in both sexes.

We report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

For over 100 years, the genetics of human anthropometric traits has attracted scientific interest. In particular, height and body mass index (BMI, calculated as kg/m2) have been under intensive genetic research. However, it is still largely unknown whether and how heritability estimates vary between human populations. Opportunities to address this question have increased recently because of the establishment of many new twin cohorts and the increasing accumulation of data in established twin cohorts. We started a new research project to analyze systematically (1) the variation of heritability estimates of height, BMI and their trajectories over the life course between birth cohorts, ethnicities and countries, and (2) to study the effects of birth-related factors, education and smoking on these anthropometric traits and whether these effects vary between twin cohorts. We identified 67 twin projects, including both monozygotic (MZ) and dizygotic (DZ) twins, using various sources. We asked for individual level data on height and weight including repeated measurements, birth related traits, background variables, education and smoking. By the end of 2014, 48 projects participated. Together, we have 893,458 height and weight measures (52% females) from 434,723 twin individuals, including 201,192 complete twin pairs (40% monozygotic, 40% same-sex dizygotic and 20% opposite-sex dizygotic) representing 22 countries. This project demonstrates that large-scale international twin studies are feasible and can promote the use of existing data for novel research purposes.

The dependence of dark conductivity and room temperature Raman spectra on boron and hydrogen incorporation in thin films of hydrogenated amorphous silicon (a-Si:H) prepared by plasma enhanced chemical vapor deposition was investigated. It was found that the dominant conductivity is Mott variable range hopping conduction. However, at lower temperatures, Efros-Shklosvkii hopping conduction is observed and contributes to the total conductivity. For structural characterization, transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of boron and hydrogen incorporation. With an increase of hydrogen incorporation and/or substrate temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of the short range order. The line width and frequency of the Raman TO Raman peak correlate with electrical measurements and suggest that this technique can be used for non-destructive characterization of a-Si:H.

In Ontario, Canada, the number of Salmonella Enteritidis (SE) cases increased over the years 2005–2010. A population-based case-control study was undertaken from January to August 2011 for the purpose of identifying risk factors for acquiring illness due to SE within Ontario. A total of 199 cases and 241 controls were enrolled. After adjustment for confounders, consuming any poultry meat [adjusted odds ratio (aOR) 2·24, 95% confidence interval (CI) 1·31–3·83], processed chicken (aOR 3·32, 95% CI 1·26–8·76) and not washing hands following handling of raw eggs (OR 2·82, 95% CI 1·48–5·37) were significantly associated with SE infection. The population attributable fraction was 46% for any poultry meat consumption and 10% for processed chicken. Poultry meat continues to be identified as a risk factor for SE illness. Control of SE at source, as well as proper food handling practices, are required to reduce the number of SE cases.

A NIST SRM certified to address the issue of crystallite size measurement through a line profile analysis has been under development for several years. In order to prepare the feedstock for the SRM, nano-crystalline zinc oxide was produced from thermal decomposition of zinc oxalate. The thermal processing parameters were chosen to yield particles in two size ranges, one with a distribution centered at approximately 15 nm and another centered at 60 nm. Certification data were collected on a NIST-built diffractometer equipped with a Johansson incident beam monochromator and scintillation detector. Data were analyzed using whole powder pattern modeling to determine microstructural data. The analysis shows domains to be in the form of discs of a fairly small aspect ratio. While both materials exhibit the effects of stacking faults through broadening of specific hkl reflections, their presence in the 60 nm is more difficult to discern. Images of the crystallites obtained with transmission electron microscopy are consistent with the results from the X-ray diffraction analyses.

Noise and electrical conductivity measurements were made at temperatures ranging from approximately 270°K to 320°K on devices fabricated on as grown Boron doped p-type a-Si:H films. The room temperature 1/f noise was found to be proportional to the bias voltage and inversely proportional to the square root of the device area. As a result, the 1/f noise can be described by Hooge’s empirical expression [1]. The 1/f noise was found to be independent of temperature in the range investigated even though the device conductivity changed by a factor of approximately 4 over this range. Conductivity temperature measurements exhibit a T-0.25 dependence, indicative of conduction via localized states in the valence band tail [2,3]. In addition, multiple authors have analyzed hole mobility in a-Si:H and find that the hole mobility depends on the scattering of mobile holes by localized states in the valence band tail [4-7]. We conclude that the a-Si:H carrier concentration does not change appreciably with temperature, and thus, the resistance change in this temperature range is due to the temperature dependence of the hole mobility. Our results are applicable to a basic understanding of noise and conductivity requirements for a-Si:H materials used for microbolometer ambient temperature infrared detection.

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

A dominant electron trap in boron-doped CZ silicon at Ec −0.41 ± 0.02 eV with a electron capture cross section >10−14 cm2 has been observed with DLTS in 2-step annealed (16 hrs at 800°C + 16 hrs at 1050°C) seed end wafers where oxygen precipitation is pronounced. A strong correlation between the generation lifetime τg (as calculated from junction reverse generation currents) and the density of this trap is also observed. Electron microscopy showed the dominant precipitates to be {100} plate type containing only Si and 0, with dislocations and punched-out loops in close proximity. Wafers from the center- or tang-sections of the ingot or those given a 1-step anneal (conditions which result in much less oxygen precipitation) contain a low density (<1.2 × 1012 cm−3) of a hole trap at Ev +0.25 eV not correlated with Tg. These wafers contain precipitates with a different morphology with much rower or minimal dislocation densities. Possible origins of the lifetime controlling electron trap is discussed.

We report on an investigation of ‘buried’ oxygen implants formed by 0+ implantation at 400 KeV and 3.5 MeV into p-type CZ (100) wafers with a dopant density NA 1015 cm−3. Peak concentrations of 1 × 1019 cm−3 to 2 × 1020 cm−3. were investigated. Test devices were fabricated on implanted and annealed wafers using conventional wafer processing. For the 400 keV implants, a 4 µm epitaxial buffer layer was grown subsequent to the 0+ implant. For a dose of 3 × 1015 cm−2 the lifetime reduction ratio for the effective generation lifetime τg at the implant peak is greater than 103 relative to an unimplanted region where τg = 150 µS. C-V and SRP profiles show evidence for oxygen donor compensation. TEM analysis reveals a well defined layer at 1 µm with respect to the original implant surface containing a relatively high density of small precipitates and dislocation loops. DLTS measurements on diodes reveal 2 electron traps designated as E1 and E2. The trap energy ∆E and capture cross section σ are (EC-ET)1 = 0.41 ± 0.020 eV and (EC-ET)2 = 0.22 ± 0.030 eV with σ 1019 cm-3. The estimated trap density NT for the dominant trap is 8.2 × 1013 cm−3 for a calculated peak 0+ implant concentration of 6.8 × 1019 cm−3. The values of ∆E are in good agreement with values for unimplanted CZ wafers subjected to 2-step precipitation anneals. The experimental results provide direct evidence that ion implantation provides an effective method of introducing atomic oxygen in silicon at concentration exceeding its solid solubility during processing to produce a buried low lifetime region.

Shallow-junction semiconductor devices have been fabricated using ion implantation and transient annealing with a Varian IA-200 isothermal annealer. Boron implanted diodes, npn bipolar transistors and CMOS ring oscillators have been fabricated and are compared to furnace annealed devices. Boron implanted diodes have been annealed with the RIA and yield acceptably low leakage currents, comparable to furnace annealed devices. The RIA devices have recombination lifetimes of ∼10 μsec. The bipolar transistors subjected to a transient anneal have good base-collector and emitterbase junctions as well as gains of ∼100 in good agreement with the design of the device. MOSFETs and CMOS ring oscillators were fabricated using self-aligned polysilicon gates. The transient annealed devices were equal or superior to devices which were furnace annealed at 800°C for 10 min. The low temperature furnace anneal was necessary to minimize short channel effects. The transient anneal resulted in ring oscillators which were a factor of two faster than furnace samples that were annealed.

Epitaxial SiGe/Si layers are being extensively investigated for use in base regions of high-speed heterojunction bipolar-transistors (HBTs). Extended defects can be formed in SiGe/Si layers by ion-implantation. Defects, once formed in the layers, can negatively impact electrical performance and also future reliability of the HBTs. The present study investigates the interaction between selective-implant damage and strained SiGe/Si layers of sub-critical thickness. Implant-damage is observed to form dislocation-sources at the edges of implanted regions in SiGe/Si heterolayers. The dislocation sources produce glide dislocation loops. Segments of these loops glide down to SiGe/Si interfaces causing misfit dislocations to arise at interfaces in the heterolayers. Misfitdislocations are formed in directions parallel to and perpendicular to the <110> edge of the implanted region. Dislocations propagate out to a distance of ∼100-150 nm past the edge of the implant in the case of Si0.9Ge0.1/Si layers of sub-critical thickness. The origin and behavior of these defects is discussed.

The effects of oxygen precipitation on the minority carrier recombination lifetime (TR) and the carrier generation lifetime (TG) have been characterized for a ‘typical’ silicon crystal grown with the Czochralski method. Infrared (IR) absorption measurements were obtained on polished wafers, before and after 2 step thermal anneals at 800°C and 1050°C to characterize the axial distribution of interstitial and precipitated oxygen in the ingot. Computerized measurements on NMOS diode and capacitor arrays were used to characterize the axial and radial distributions of carrier lifetime. The results indicate that oxygen precipitation is the dominant mechanism contributing to the degradation of both minority carrier recombination andgeneration lifetime.