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Epitaxial ReSi1.75 thin films of variable thickness between 15nm and 150nm have been prepared in an one step process by Facing Target Sputtering (FTS) onto heated (100) and (111)Si and SOS wafers. The epitaxial relations and film structure have been investigated by Xray diffraction and transmission electron microscopy. Epitaxial growth was found at a substrate temperature of 1070K. Thermoelectric properties were measured between 100K and 450K and compared to the transport behavior of bulk ReSi1.75 and polycrystalline films. A distinct dependence of both the conductivity and thermopower was found on the film thickness, on unintentional doping and on the film structure. The results show that epitaxial ReSi1.75 films prepared by FTS can be a basis for further investigations of thermoelectric silicide/silicon multilayers.
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