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Pulsed laser deposition (PLD ) is known for its capacity to reproduce a target composition on a substrate. We have used this deposition technique to produce thin films of transition metal chalcogenides. However, the deposits were always deficient in Te relative to the starting material ( composed by a refractory metal ( niobium ) and a chalcogene ( tellurium ) ). Variations of the interreticular distances have been observed with respect to fluence and substrate temperature. We show that spatial composition of the films is determined by a degree of crystallinity of deposit and by the reaction of formation of Te2 molecule within laser induced plume Two kinds of deposits have been obtained : Nb5Te4-type thin films which have a one-dimensional structure and NbTe2-type thin films which have a two-dimensional structure. While NbTe2 films have been realized by sputtering, it is the first time that Nb5Te4 films have been deposited.
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