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It is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1−xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1−xGaxAs.
We have observed two local vibrational modes related to H bonded to N acceptors in ZnSe samples grown by metal organic vapor phase epitaxy. The modes have been seen in both infrared and Raman spectroscopy. The new mode seen at 3194 cm-1 is assigned to an N-H stretching vibrational mode and the mode found at 783 cm-1 is tentatively assigned to an N-H wagging vibrational mode. Polarized Raman spectroscopy was used to determine that the symmetry of the defect complex is C3v, which implies that the H atom is in either a bonding or anti-bonding position.
Studies of the structure and electrical properties of regular and irregular misfit dislocations in undoped and N-doped ZnSe epilayers grown on GaAs(001) substrates by transmission electron microscopy (TEM), cathodoluminescence (CL) are reported. In undoped ZnSe epilayers, two sets of misfit dislocation arrays were observed: a straight orthogonal array along  and, and an irregular array roughly along  and  directions. The CL observations suggest that the irregular dislocations trap carriers more efficiently than the dislocations along <110>, possibly due to the high density of kinks existing along the zig-zag irregular dislocations. These irregular dislocations can be eliminated by doping nitrogen in the ZnSe epilayer with [N]≥l×1018 cm−3.
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