In this paper we report on the epitaxial growth of strained thin film Si1-xGex on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si1-xGex with xGe=11.6 at. % was epitaxially grown on <001> Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si1-xGex film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, 29Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy for Si1-xGex (x=l 1.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600°C.