Perovskite oxide films inclusive of high Tc cuprates were fabricated by pulsedlaser deposition (PLD) under both conventional Po2(0.01∼1Torr) and high vacuum(≤10−6 Torr) conditions and their surface morphology, crystal quality, and conductivity were evaluated. Under optimized conventional PLD conditions, we obtained high quality YBa2Cu3O7−δ (YBCO) films that showed clear energy gaps and atomically flat surface image in the small area (4x4nm) STM/STS measurements. AFM and SEM ana!yscs on wider film surfaces (∼1x1μm), however, revealed granular structure of about 250nm grains with their root mean square roughness of 5nm.
Under high vacuum PLD, i.e. laser MBE conditions, not only epitaxial but also two dimensional growth has been verified for such films as SrTiO3−x, SrVO3−y, and (AE)CuO2−z(AE=alkaline earth metal) by the RHEED observation of fine streak patterns and intensity oscillations. AFM demonstrated atomically flat surfaces of these films. Oxgen or nitric oxide pressure at the laser MBE growth gave crucial effects on the electrical conductivity of SrTiO3−x. and predominant crystal phase of SrCuO2−z.
Insulating BaTiO3 films with atomically flat surfaces could be fabricated by both conventional and high vacuum PLD conditions. RBS channeling measurements revealed very high epitaxial quality (χmin−2%) of our SrTiO3 and BaTiO3 films. The factors controlling the surface morphology and electrical properties of perovskite oxide epitaxial films,are discussed.