We present low-frequency spectral energy distributions of 60 known radio pulsars observed with the Murchison Widefield Array telescope. We searched the GaLactic and Extragalactic All-sky Murchison Widefield Array survey images for 200-MHz continuum radio emission at the position of all pulsars in the Australia Telescope National Facility (ATNF) pulsar catalogue. For the 60 confirmed detections, we have measured flux densities in 20 × 8 MHz bands between 72 and 231 MHz. We compare our results to existing measurements and show that the Murchison Widefield Array flux densities are in good agreement.

In this paper a novel buffer layer architecture consisting of LaMnO3/MgO/TiN is proposed as a suitable structural and chemical template for the epitaxial growth of high-transition temperature (Tc) superconductors on Cu metal surfaces. Using techniques such as high-energy electron diffraction and scanning transmission electron microscopy, we present in situ and ex situ analyses of the buffer-layer and superconductor growth with focus on structural properties of the interfaces formed. While MgO is a good barrier to oxygen diffusion, we find that MgO alone is not a suitable buffer layer due to rapid Cu diffusion. Further, growth of MgO with a single epitaxy can be hindered by the presence of impurities such as S, which form strongly bonded superstructures on the metal surface. With the addition of a TiN layer as a barrier to Cu diffusion, oxide formation is suppressed, interfaces are clean, and a single cube-on-cube epitaxy is observed. While the Cu/TiN and TiN/MgO interfaces are rough, the MgO and LaMnO3 layers planarize the material, leading to growth of smooth YBa2Cu3O7−δ (YBCO). Residual strain in the YBCO film is 0.25% or less and does not lead to apparent cracking. The superconducting properties of the samples were investigated by electrical transport and magnetization measurements. For the first time, high critical current density (Jc) values are reported for YBCO films grown on (001) single-crystal and 100‹100›?textured Cu surfaces without intervening metal coatings. Jc on single crystal-like substrates is as high as 3.5 MA/cm2. Reduced Jc of approximately 1 MA/cm2 on rolled Cu tapes is limited by damage to the tape surface during the rolling process.

A single LaMnO3 buffer layer was developed for the growth of superconducting thick YBa2Cu3O7−δ (YBCO) films on polycrystalline Ni-alloy substrates where a biaxially textured MgO layer, produced by ion-beam assisted deposition (IBAD), was used as a template. Using pulsed laser deposition, a 1.65-μm-thick YBCO film with a critical current density of 1.4 × 106 A/cm2 in self field at 75 K was achieved on sputtered LaMnO3-buffered IBAD MgO substrates. This corresponds to a critical current (Ic) of 231 A/cm-width. This result demonstrates the possibility of using both LaMnO3 buffer and IBAD MgO template for producing high current density YBCO-coated conductors.

High critical current density (high-Jc) YBa2Cu3O7–δ (YBCO) films were obtained by pulsed laser ablation on biaxially textured Cu substrates. To achieve epitaxy of LaMnO3 (LMO) on Cu, thin epitaxial Ni overlayers were deposited on Cu tapes. The structure comprises the layer sequence of YBCO/LMO/Ni/Cu. For 200-nm-thick YBCO, self-field Jc values exceeding 1 × 106 A/cm2 at 77 K were achieved. Characterization of these short prototype conductors revealed good structural and morphological properties. Magnetic analysis suggested that hysteretic loss due to the ferromagnetic Ni overlayer is minimal.

Compositionally asymmetric tri-color superlattices (TCS) with a combination of BaTiO3/SrTiO3/CaTiO3 have been grown by pulsed laser deposition (PLD) on atomically-flat SrRuO3-covered (001) SrTiO3 substrates. Conducting SrRuO3 films with single-terrace steps that closely mimic those of the SrTiO3 substrate also were grown by PLD and serve as bottom electrodes. In order to achieve atomic control of each layer, we have calibrated precisely the number of laser pulses required to grow one unit-cell-thick layers (∼200 for a laser spot of 0.4 mm2). These conditions allowed recording of pronounced oscillations of the reflection high-energy electron diffraction (RHEED) specular spot intensity over the entire growth run - even for TCS layers totaling more than 1000 nm in total thickness.

We investigated the influence of a chemisorbed S template with c(2 × 2) structure on the epitaxial growth of different oxide buffer layers on {100}〈100〉 Ni. The sulfur superstructure spontaneously forms on the Ni surface during the texturing anneal as a consequence of segregation. However, depending on the initial S bulk concentration and/or specific annealing conditions, the S layer can cover less than the entire substrate's surface. We show that an incomplete c(2 × 2) coverage causes degradation of the seed buffer layer texture as compared to the substrate texture. A simple step consisting of an H2S predeposition anneal can be used to control the superstructure coverage and optimize the seed layer texture.

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni–1.7% Fe–3% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effects of increasing the annealing speed on the texture, microstructure, and carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of yttria-stabilized zirconia and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using pulsed laser deposition. Critical current densities (Jc) of 1.9 MA/cm2 at 77 K and self-field and 0.34 MA/cm2at 77 K and 0.5 T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers and the highest ever obtained using solution seed layers.

The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with Tc0 ˜38.8 K and those from in situ anneal with Tc0 ˜24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the Tc0 down to 24 K.

Power applications of high-temperature superconducting (HTS) coated conductors will require stabilization against thermal runaway. We have developed conductive buffer layers to electrically couple the HTS layer to the underlying metal substrate. The structure comprises the layer sequence of SrRuO3 (SRO) on LaNiO3 (LNO) on biaxially textured Ni substrates. We report baseline investigations of compatibility of SRO/LNO multilayer structure with processing of Yba2Cu3O7−δ (YBCO) and demonstrate biaxially textured YBCO films on conductively buffered Ni tapes. These YBCO coatings exhibit self-field Jc values as high as 1.3 × 106 A/cm2 at 77 K, and the entire structure (HTS + conductive buffers + metal substrate) shows good electrical connectivity. These results demonstrate that SRO/LNO buffer layers may provide a basis for stabilized coated conductors.

Z-contrast images and electron energy loss spectra (EELS) were obtained from low angle grain boundaries in SrTiO3 and YBa2Cu3O7-x (YBCO). Z-contrast images are easy to interpret and especially useful for positioning the beam to acquire EELS data from small sample areas [1], because both these techniques can be performed simultaneously.

In high-temperature superconductors even a single grain boundary can reduce the critical current by up to four orders of magnitude. The band-bending model can quantitatively explain this phenomenon. YBCO is a hole-doped superconductor with about one hole per unit cell for optimum doping at x close to zero. It has a structure closely related to the perovskite structure, and Z-contrast images have shown that the dislocation cores are made up of similar structural units as in SrTiO3.[2,3] Our EELS measurements show clear evidence for band bending effects around isolated dislocation cores in an undoped 8° low angle grain boundary.

In an effort to develop alternative single buffer layer technology for YBa2Cu3O7-δ (YBCO) coated conductors, we have investigated LaMnO3 (LMO) as a potential buffer layer. High-quality LMO films were grown directly on biaxially textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. YBCO films were then grown on LMO buffers using pulsed laser deposition. Detailed X-ray studies have shown that both YBCO and LMO layers were grown with a single epitaxial orientation. Rutherford backscattering spectroscopy (RBS) analyses have indicated the ratio of La to Mn ratio is 1:1. SEM micrographs indicated that 3000-Å-thick LMO films on biaxially textured Ni (100) substrates were dense, continuous and crack-free. A high Jc of over 1 MA/cm2 at 77 K and self-field was obtained on YBCO films grown on LMO-buffered Ni or Ni-W substrates. We have identified LaMnO3 as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films.

We have investigated the diffusion mechanism of Hg and Tl cations in cation-exchange process that has been used successfully for fabrication of Hg-based high-Tc superconducting films. Scanning electron microscopy/energy dispersive spectroscopy (SEM/EDS) was employed to map the distribution of Tl and Hg cations in films quenched at different stages of the cation exchange process. SEM/EDS mappings showed that the nonuniform distribution of Hg is visible in micrometer size on the surface of samples quenched after short-time (∼10min) Hg-annealing, but this nonuniformity disappears for longer-time (∼45 min) Hg-annealing samples. This change could be ascribed to different stages in Hg diffusion -- the former is the early stage when Hg is concentrated in the channels and the latter Hg-cations have already diffuse to grains. Our experimental results hence suggest that Hg-cations channel through defects in the films then diffuse into grains along a-b planes and vise versa for Tl-cations. The diffusion mechanism of anions (oxygen) in post annealing has also been discussed. Fluorine-doped Hg-1212 films were post annealed in flowing oxygen at 300 °C for several hours. Magnetic measurement has shown these samples are comprised pure overdoped Hg-1212 phase with smooth and sharp transition below 120 K, but resistivity vs. temperature measurement shows a kink at ∼123 K. This implies that the optimally doped Hg-1212 phase with higher Tc might be surrounded by overdoped Hg-1212 phase and their contribution to magnetization is minimized, thus the possible diffusion mechanism for anions is also through grain boundaries at a much larger time scale compared to the cations.

The use of magnesium diboride in superconducting magnets, transmission lines, or other large-scale applications depends on the transport-current characteristics of this material in magnetic field, and how they compare to the properties of conventional and high-temperature superconductors. Thin films of boron grown on sapphire substrates during electron-beam evaporation were exposed to Mg vapor to produce 0.5-μm thick layers of the metallic compound MgB2. Four-terminal measurements of their voltagecurrent relations, E(J), were carried out before and after exposure to Bφ =1-T and higher doses of 1-Gev U ions. These doses lowered critical temperatures Tc≈39 K less than 0.1 degree, raised the normal-state resistivity, and reduced the loss-free critical current density, Jc. Higher doses added little. The reduction of current densities was greater in the presence of applied magnetic field greater than 0.1 T.

A low-cost, non-vacuum reel-to reel dip-coating system has been used to continuously fabricate epitaxial Gd2O3 buffer layers on mechanically strengthened, biaxially textured Ni- (3at.%W-1.7at%Fe), defined as Ni-alloy, metal tapes. X-ray diffraction analysis of the seed Gd2O3 layers indicated that well textured films can be obtained at processing temperatures (Tp) between 1100 and 1175°C. Processing speed did not significantly affect the crystalline quality of the Gd2O3. Scanning electron microscopy revealed a continuous, dense and crack-free surface morphology for these dip-coated buffers. The Gd2O3 layer thickness led to remarkable differences in the growth characteristics of the subsequent YSZ and CeO2 layers deposited by rfmagnetron sputtering. Epitaxial YBCO films grown by pulsed laser deposition on the short prototype CeO2/YSZ/Gd2O3/Ni-(3at%W-1.7at%Fe) conductors yielded self-field critical current densities (Jc) as high as 1.2×106 A/cm2 at 77 K. Pure Ni tapes were used to asses the viability of dip-coated buffers for long length coated conductor fabrication. The YBCO films, grown on 80 cm long and 1 cm wide CeO2/YSZ/Gd2O3 buffered Ni tapes by the industrially scalable ex-situ BaF2 precursor process, exhibited end-to-end self-field Jc of 6.25×105 A/cm2 at 77 K.

We present a study of the {100}<100> biaxially textured Ni (001) surface and oxide seed layer nucleation by in situ reflection high-energy electron diffraction and Auger electron spectroscopy. Our observations revealed the existence of a c(2×2) superstructure on the textured Ni surface due to segregation of sulfur contained in the bulk metal. The sulfur superstructure promotes the epitaxial (002) nucleation of seed layers such as Y2O3-stabilized ZrO2 (YSZ) and CeO2 on the metal and optimizes the biaxial texture necessary for high Jc superconductors on RABiTS.

We report the fabrication and superconducting properties of ∼0.5 μm thick, fine-grained polycrystalline coatings of MgB2 on single-crystal substrate surfaces. The films exhibit large critical current densities, implying little effect from the grain boundaries. Analyses for thermal activation effects are inconclusive, and evidence is presented that the irreversibility line is dominated by the combined influences of Hc2 anisotropy and polycrystallinity. Comparative studies of the magnetic persistent currents and electrical transport properties reveal excellent agreement over a wide range of temperature and magnetic field. This result is contrary to similar comparisons on high-temperature cuprates, where disparities arise from the effects of large flux creep and the diverse electric field regimes probed by the two techniques. The MgB2 films exhibit extremely sharp voltage-current relations away from the irreversibility line, in qualitative agreement with observed large Jc values and low rates of magnetic flux creep.

Short segments of YBa2Cu3O7-y (YBCO) coated conductors were fabricated on rolling-assisted biaxially textured substrates (RABiTS) with a layer sequence of CeO2/YSZ/Ni using an ex situ BaF2 precursor process. Pulsed laser deposition (PLD) was used to deposit both YSZ and CeO2 layers. The YBCO films were grown using e-beam coevaporated Y–BaF2–Cu precursors followed by postannealing. An overall engineering current density, JE, of 28,000 A/cm2 and critical current, Ic, of 147 A/cm width at 77 K were achieved for a 1.6-μm-thick YBCO film. This result demonstrates the possibility of using both the ex situ BaF2 precursor approach and the RABiTS process for producing long lengths of high-JE coated conductors.

Chemical solution epitaxy was used to deposit an epitaxial film of Gd2O3 on roll-textured nickel. A 2-methoxyethanol solution of gadolinium methoxyethoxide was used for spin-coating and dip-coating. Films were crystallized using a heat treatment at 1160 °C for 1 h in 4% H2/96% Ar. Single-layer films were approximately 600 Å in thickness, and thicker films could be produced using multiple coatings. θ/2θ x-ray diffractograms revealed only (0041) reflections, indicating a high degree of out-of-plane texture. A pole-figure about the Gd2O3 (222) reflection indicated a single in-plane epitaxy. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Atomic force microscopy revealed an average surface roughness of 53 Å. Electron diffraction indicated that the misalignment of the majority of the grains in the plane was less than 10°. High-current (0.4 MA/cm2) Yba2Cu3O7–δ films were grown on roll-textured nickel substrates using Gd2O3 as the base layer in a three-layer buffer structure.

In order to develop an alternative buffer layer architecture using the sol-gel process to produce YBCO (YBa2Cu3O7-δ) coated conductors, Yb2O3 has been chosen as the candidate material. Buffer layers of Yb2O3 were epitaxially grown on biaxially textured-Ni (100) substrates by the sol gel process for the first time. The Yb2O3 precursor solution was prepared from an alkoxide sol-gel route in 2-methoxyethanol and was deposited on textured-Ni (100) substrates by either spin coating or dip coating methods. The amorphous film was then processed at 1160°C under flowing (96%)Ar/H2(4%) gas mixture for one hour. The Yb2O3 film exhibited a strong c-axis orientation on the Ni (100) substrates. The phi and omega scans indicated good in plane and out of plane orientations. The X-ray (222) pole figure showed a cube-on-cube epitaxy. High current YBCO films were grown on the Yb2O3 sol-gel buffered-Ni substrates.