The conducting carbon nanowires embedded in fullerene matrix are synthesized by high energy heavy ion irradiation of thin fullerene film. We report the control growth of carbon nanowires, their electrical and field emission properties. The typical diameter of the conducting tracks is observed to be about 40 to 100 nm. The conductivity of the conducting zone is about seven orders of magnitude higher than that of the fullerene matrix. Conducting atomic force microscopy evidences the conducting nano wires. All the nanowires are parallel to each other and are perpendicular to the substrate. The density (spacing), growth direction and length of these carbon nanowires simply can be changed by ion fluence, angle of irradiation and the film thickness, respectively. The field emission measurements on these nanowires reveal that the threshold voltage is about ( ~13 V/mm), whereas the as deposited fullerene films shows a break down at ( ~ 51 V/mm). The present approach of making controlled conducting carbon nanowires is quite promising, as it takes few seconds of ion irradiation and no catalyst is required.