The influence of the laser annealing on the defect structure
of the near-surface layer of silicon crystal implanted with
40 keV Ge ions is reported. Evolution of defect structure
during nanosecond pulse laser annealing is characterised by
means of several complementary methods: reflection high-energy
electron diffraction, interference-polarizing microscopy,
Rutherford back-scattering and secondary ion mass spectrometry.
Regions irradiated with different energy densities of the laser
beam are compared. The role of the dopant in the layer
recrystallised from the melt is discussed.