This paper extends the standard double-exponential jump-diffusion (DEJD) model to allow for successive jumps to bring about different effects on the asset price process. The double-exponentially distributed jump sizes are no longer assumed to have the same parameters; instead, we assume that these parameters may take a series of different values to reflect growing or diminishing effects from these jumps. The mathematical analysis of the stock price requires an introduction of a number of distributions that are extended from the hypoexponential (HE) distribution. Under such a generalized setting, the European option price is derived in closed-form which ensures its computational convenience. Through our numerical examples, we examine the effects on the return distributions from the growing and diminishing severity of the upcoming jumps expected in the near future, and investigate how the option prices and the shapes of the implied volatility smiles are influenced by the varying severity of jumps. These results demonstrate the benefits of the modeling flexibility provided by our extension.

Background: Among patients with schizophrenia, there is evidence of a negative association between self-stigma and subjective quality of life (SQoL), and self-esteem was an important mediator in the association. We attempted to use a longitudinal study to investigate the aforementioned mediation on a sample with schizophrenia. Methods: We used longitudinal data retrieved from medical records of a psychiatric centre between June 2014 and December 2015. In the data, we retrieved information of self-stigma using the Self-Stigma Scale — Short; SQoL, using the WHO questionnaire on the Quality of Life — Short Form; and self-esteem, using the Rosenberg Self-Esteem Scale. All the measures were evaluated five times. Linear mixed-effect models accompanied by Sobel tests were used to tackle the mediating effects. Results: Data from 74 patients (57 males) with schizophrenia were eligible for analysis; their mean (SD) age was 39.53 (10.67); mean age of onset was 22.95 (8.38). Self-esteem was a mediator for patients in physical (p = .039), psychological (p = .003), and social SQoL (p = .004), but not in environment SQoL (p = .051). Conclusion: Based on our findings, mental health professionals could tailor different programs to patients with schizophrenia, such as self-stigma reduction and self-esteem improvement programs. However, treatment as a whole should be sensitive to both self-stigma and self-esteem. Also, we should consider individuals’ health and wellbeing from social perspectives of disability rather than the medical model of disability emphasising symptoms and medications.

Owing to energy conservation of waste heat, Lead telluride, PbTe, based materials have promising good thermoelectric properties around a range of middle temperature (Fig. 1, from 300 to 600°C), due to their high melting point, fine chemical stability, and the high figure of merit Z. The general physical properties and factors affecting the figure of merit have been reviewed. This research is focused on the n-type of PbTe materials and collocated with analysis of densities, hardness, elastic modulus, and thermoelectric properties thermoelectric figure of merit ZT=GS2T/κ (where G is electrical conductivity, S is Seebeck coefficient , T is absolute temperature, and κ is thermal conductivity). Room temperature hardness and Young’s modulus are measured by nano-indentation. In this study, the hot-press compacts under the pressure of 4 ton/cm2 can reach the maximum density about 8.2 g/cm3, and hardness and elastic modulus are 0.6 GPa and 70 GPa, respectively. The figure of merit value (ZT) of PbTe in low temperature (around 340°C) was found about 1 with carrier concentration above 1019 cm−3. These results also indicate that the powder metallurgy parameters provide potentialities for further increase of the high efficiency of energy conversion in PbTe materials.

Three types of Ganium Nitride (GaN) transistors were studied in this work. The devices were fabricated and exhibited unique characteristics over on-state current and off-state blocking performances. We also compared the performance differences of devices fabricated by multiepitaxial GaN/AlGaN layers on different substrates (Sapphire and Si) and evaluated the correlations among starting substrate, device variation, and manufacturing uniformity. The first device is a normally-on device with Sapphire substrate which shows good drain saturation current (Idsat) and breakdown characteristics, but the gate leakage current is quite large. The second device is a normally-off GaN transistor named metal-insulate-semiconductor (MIS) heterojunction field-effect transistor (MIS-HFET) which exhibits good performance with threshold voltage (Vth) of 3V and breakdown voltage (Vbd) of over 1800V. However the third device is a normally-off GaN metal-oxide-semiconductor field-elect transistor (MOSFET) structure which is rather difficult to exhibit good blocking characteristic due to inadequate doping process control of the reduce-surface-field (RESURF) region.

A novel polymer dispersant, poly(oxyethylene)-segment imide (POEM) in the structure was incorporated in the nanocrystalline TiO2 film as the electrode. The uses of the dispersants could disperse TiO2 by decreasing the van der waals force among the nanoparticles, observed by TEM. The resultant TiO2/POEM film as the photoanode rendered the dye-sensitized solar cell (DSSC) with enhanced performance. By comparing to the traditional photoanode composing of polyethylene glycol (PEG) dispersed TiO2, the POEM dispersed TiO2 provided large surface area and high roughness in the dye adsorbed film. Furthermore, the fabricated TiO2/POEM photoanode has a better light-scattering property which contributes to the improvement for the short-circuit current density (Jsc) and the power-conversion efficiency (_) of the DSSC to be 19.1 mA cm-2 and 8.7%, respectively. The performance is superior to 13.2 mA cm-2 and 7.34% for a DSSC with the photoanode containing TiO2/PEG.

Ternary Sn-In-Cu alloys are prepared and equilibrated at 250 °C for 2 to 20 weeks. The phases formed in these alloys are experimentally determined. The 250 °C Sn-In-Cu isothermal section is established according to the phase equilibrium information obtained in this study and that of the three constituent binary systems. It has eight single-phase regions, namely liquid, δ1-Cu41Sn11, ε-Cu3Sn, δ2-Cu7In3, η-(Cu6Sn5, Cu2In), Cu11In9, Cu2In3Sn, and α-(Cu) phases, 14 two-phase regions, and seven three-phase regions. In the Sn-In-Cu system at 250 °C, the η-Cu6Sn5 and η-Cu2In phases form a continuous solid solution and the ternary Cu2In3Sn compound is observed. The δ1-Cu41Sn11 phase is stabilized at 250 °C with the introduction of indium although it transforms into α-(Cu) and ε-Cu3Sn phases via a eutectoid reaction around 350 °C in the binary Sn-Cu system. Except for the Cu11In9 phase and the Cu2In3Sn ternary compound, the other binary compounds all have significant indium and tin mutual solubilities.

We reviewed genotyping and medical records of 53 patients with end-stage renal disease and methicillin-resistant Staphylococcus aureus (MRSA) bacteremia in a medical center in Taiwan. In multivariate analysis, hospitalization within the previous year was independently negatively associated with infection with community-associated MRSA strains, and an increased number of years of dialysis predicted the recovery of patients infected with community-associated MRSA strains.

We found out the promising catalyst materials(NiPd). The NiPd not only has the low melting point but also has the Pd enhancing the surface diffusion at low temperatures(<500'c ). With the Pd film thickness increasing, we could control the CNT density and synthesize more aligned and uniform CNTs. We also obtained the better electrical properties including lower turn-on field (3.4 V/um) and higher current density (34.3 mA/cm2) for NiPd as catalyst. For the advantages described above, we believe that the difficulty of low temperature on FED can be overcome. Further, the large area field emission display might be fabricated in the future.

To the best of our knowledge, this is the first report of external ear canal schwannoma in the English literature. Several detailed clinical and pathological features were demonstrated. We suggest that if a tender, encapsulated mass is found in the external ear canal, the diagnosis of schwannoma should be taken into consideration.