In this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

The use of Au nanoparticles as catalysts for growth of Si nanowires poses fundamental reliability concerns for applications in Si semiconductor technology. In this work we show that the choice of catalysts can be broadened when the need for catalytic precursor dissociation is eliminated. However, the requirements for selective deposition in a gas phase transport -limited regime become stringent. When competing deposition of amorphous Si can bury the particles faster than the incubation time for VLS growth, no nanowire growth will be initiated. We show that the use of a catalyst such as In, already in a liquid form at the growth temperature, is effective. Therefore, the choice of VLS catalysts among the low melting point metals from the III, IV and V groups is suggested.

Nickel mono-silicide has been considered a promising silicide candidate for sub-90 nm nodes of integrated circuits manufacturing. To form high-quality nickel mono-silicide as source/drain contact electrodes, a two-step low temperature rapid thermal process has been proposed, in which the as-deposited Ni will react with silicon during a low temperature (<310 °C) first anneal. Due to the lower annealing temperature Ni2Si will form after the first anneal. To better control the silicidation process the growth kinetics of Ni2Si thin film fabricated by solid-state reaction of sputtered Ni thin film on n+/p junction at low temperature is investigated in this paper. It is demonstrated that between 260 and 280 °C the thickness of Ni2Si thin film has a linear rather than parabolic dependence on annealing time. The corresponding activation energy for this linear growth is found to be ∼1.35 eV.