We have investigated the low-temperature epitaxial growth of thin silicon films by hotwire chemical vapor deposition (HWCVD). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have found conditions for epitaxial growth at low temperatures achieving twinned epitaxial growth up to 6.8 μm on Si(100) substrates at a substrate temperature of 230°C. This opens the possibility of growing high quality films on low cost substrates. The H2:SiH4 dilution ratio was set to 50:1 for all growths. Consistent with previous results, the epitaxial thickness is found to decrease with an increase in the substrate temperature.