We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the “intrinsic” valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.

The interfacial regimes of cobalt/pentacene/cobalt (Co/Pc/Co) trilayers were emulated through the ultrathin pentacene/cobalt (Pc/Co) and cobalt/pentacene (Co/Pc) bilayers. Employing the magneto-optical Kerr effect (MOKE) measurement, we found the coercivity of Co bottom film in a thickness of 3.4 nm experienced a slight reduction upon the adsorption of Pc molecules. For the bilayers prepared with reversed order of deposition, the Co film deposited on a 6.4 nm Pc layer showed no observable ferromagnetic order at room temperature until its thickness reached 3 nm. After the onset of magnetic order, the x-ray images acquired on Pc/Co revealed a complicated magnetization patterns comparing to those observed on Co/Pc bilayers. Because the spin-polarized carriers will interact with the environment along their transport path, the presence of a non-magnetic layer and the occurrence of complicated domain structures suggested the spin-polarized carriers would experience a greater disturbance on their spin coherence when crossing the Pc/Co interface.