In situ liquid cell transmission electron microscopy (TEM) is a very useful tool for investigating dynamic solid–liquid reactions. However, there are challenges to observe the early stages of spontaneous solid–liquid reactions using a closed-type liquid cell system, the most popular and simple liquid cell system. We propose a graphene encapsulation method to overcome this limitation of closed-type liquid cell TEM. The solid and liquid are separated using graphene to suspend the reaction until the graphene layer is destroyed. Graphene can be decomposed by the high-energy electron beam used in TEM, allowing the reaction to proceed. Fast dissolution of graphene-capped copper nanoparticles in an FeCl3 solution was demonstrated via in situ liquid cell TEM at 300 kV using a cell with closed-type SiNx windows.

The preparation of transmission electron microscopy (TEM) samples from powders is quite difficult and challenging. For powders with particles in the 1–5 μm size range, it is especially difficult to select an adequate sample preparation technique. Epoxy is commonly used to bind powder, but drawbacks, such as differential milling originating from unequal milling rates between the epoxy and powder, remain. We propose a new, simple method for preparing TEM samples. This method is especially useful for powders with particles in the 1–5 μm size range that are vulnerable to oxidation. The method uses solder as an embedding agent together with focused ion beam (FIB) milling. The powder was embedded in low-temperature solder using a conventional hot-mounting instrument. Subsequently, FIB was used to fabricate thin TEM samples via the lift-out technique. The solder proved to be more effective than epoxy in producing thin TEM samples with large areas. The problem of differential milling was mitigated, and the solder binder was more stable than epoxy under an electron beam. This methodology can be applied for preparing TEM samples from various powders that are either vulnerable to oxidation or composed of high atomic number elements.

The dislocation distribution of high-quality single-crystal gallium nitride (GaN) films grown by the hybrid vapor phase epitaxy was analyzed. This study examined the domain structure of GaN from the dislocation distribution on the macroscale by optical microscopy. The surface structure of GaN consisted of domains with microcolumns as the substructure. The inner domains contained a lower density of dislocations but a large number of these dislocations were observed along the domain boundaries. The existence of a domain boundary structure doubly increased the total dislocation density.

The ordered L12-type Al3Ti–(8, 10, 15)% Cr intermetallic compounds, namely, Al67Ti25Cr8, Al66Ti24Cr10, and Al59Ti26Cr15, were prepared by induction melting followed by thermomechanical treatment. Their microstructure, compositional variation, and crystal structure were characterized using X-ray diffraction, optical microscopy, and scanning and transmission electron microscopy equipped with energy-dispersive spectroscopy. The Al67Ti25Cr8 alloy consisted of the L12-Al3Ti matrix and precipitates of α2-Ti3Al, D022-Al3Ti, and γ-TiAl. The Al66Ti24Cr10 and Al59Ti26Cr15 alloys consisted of the L12-Al3Ti matrix and grains of α-TiAl and β-Cr.

Distribution of wax in laser printer toner was observed using an ultra-high-voltage (UHV) and a medium-voltage transmission electron microscope (TEM). As the radius of the wax spans a hundred to greater than a thousand nanometers, its three-dimensional recognition via TEM requires large depth of focus (DOF) for a volumetric specimen. A tomogram with a series of the captured images would allow the determination of their spatial distribution. In this study, bright-field (BF) images acquired with UHV-TEM at a high tilt angle prevented the construction of the tomogram. Conversely, the Z-contrast images acquired by the medium-voltage TEM produced a successful tomogram. The spatial resolution for both is discussed, illustrating that the image degradation was primarily caused by beam divergence of the Z-contrast image and the combination of DOF and chromatic aberration of the BF image from the UHV-TEM.

The formation and morphological evolution of germanides formed in a ternary Ni/Ta-interlayer/Ge system were examined by ex situ and in situ annealing experiments. The Ni germanide film formed in the Ni/Ta-interlayer/Ge system maintained continuity up to 550°C, whereas agglomeration of the Ni germanide occurred in the Ni/Ge system without Ta-interlayer. Through microstructural and chemical analysis of the Ni/Ta-interlayer/Ge system during and after in situ annealing in a transmission electron microscope, it was confirmed that the Ta atoms remained uniformly on the top of the newly formed Ni germanide layer during the diffusion reaction. Consequently, the agglomeration of the Ni germanide film was retarded and the thermal stability was improved by the Ta incorporation.

The oxidation mechanism and thermal stability of nickel oxide (NiO)/carbon nanotube (CNT) composites were investigated by examining composites with different NiO contents by thermogravimetric analysis and transmission electron microscopy (TEM). NiO acts as a catalyst in the oxidation of CNT in the composite. CNTs can be oxidized, even in a vacuum, by reducing NiO to nickel at temperatures lower than the normal oxidation temperature of CNTs. This phase transition was confirmed directly by in situ heating TEM observations. In air, reduction by CNT occurs simultaneously with reoxidation by gaseous O2 molecules, and NiO maintains its phase. The thermal stability decreased with increasing NiO content because of defects in the CNT generated by the NiO loading.

Analytical electron microscopy (AEM) was used to examine the initial interfacial reaction layers between a eutectic Sn–3.5Ag solder and an electroless nickel-immersion gold-plated (ENIG) Cu substrate during reflow at 255 °C for 1 s. AEM confirmed that a thick upper (Au,Ni)Sn2 layer and a thin Ni3Sn4 layer had formed through the reaction between the solder and ENIG. The amorphous electroless Ni(P) plated layer transformed into two P-rich Ni layers. One is a crystallized P-rich Ni layer, and the other is an intermediate state P-rich Ni layer before the crystallization. The crystallized P-rich layer consisted of Ni2P and Ni12P5. A thin Ni2P layer had formed underneath the Ni3Sn4 layer and is believed to be a predecessor of the Ni2SnP ternary phase. A Ni12P5 phase was observed beneath the Ni2P thin layer. In addition, nanocrystalline Ni was found to coexist with the amorphous Ni(P) phase in the intermediate state P-rich Ni layer.