Herein we report our efforts to prepare new precursors to niobium nitride (NbN) and tantalum nitride (TAN, Ta3N5) thin films. Treatment of MC15 (M = Nb, Ta) with tertbutylamine in benzene solvent affords complexes of the formula [MCI2 (NtBu)(NHtBu)(NH2
tBu)]2. The niobium complex [NbC12(NtBu)(NHtBu)- (NH2
tBu)]2 affords NbN films on glass substrates between 500-600 °C, while the tantalum analog [TaC12(NtBu)(NHtBu)(NH2
tBu)]2 gives films of Ta3N5 in this temperature range. Treatment of MCI5 (M = Nb, Ta) with 1,1-dimethylhydrazine in dichloromethane solvent affords complexes of the formula [MC12(NNMe2)(NHNMe2)(NH2NMe2)]n. These hydrazido complexes afford cubic MN films upon glass substrates at ≥400°C. Analyses of the films are presented.