The semiconductor industry is continually striving'for smaller, denser devices. Microdiffractometry is an analytical technique which endeavors to apply x-ray diffraction techniques for measuring strain and phase information to areas approaching 50 micrometers diameter or less.
This study extends the work of Goldsmith and Walker in the measurement of strain using the lattice distortion or sin2(ψ) plot method.
The systematic errors arising from both sample and beam displacement relative to the center of rotation of the cample ie examined. A relationship is derived which predicts the influence of these displacements upon the slope of a stress plot. The predictions are compared to experiment.
The influence of random errors arising from particle size and photon counting statistics will also be discussed. Guidelines will be presented which will minimize both systematic and random errors.