To secure the reliability of flexible electronics, the effect of multicomponent stress on the device properties during complex mechanical deformation needs to be thoroughly understood. The electrical resistances of metal interconnects are investigated by in situ monitoring at different twisting angles and with different pattern positions. As the twisting angle increased, the electrical resistance increased earlier. Furthermore, in the line pattern located far from the central axis, severe electrical degradation and fatigue damage formation were observed. Multicomponent stress evolution during twisting was analyzed by the finite-element simulation method. For easy practical application for estimating the representative twisting strain, an analytic solution of twisting deformation was formulated and compared with the simulation. Using the equivalent strain, the fatigue lifetime was fitted, and the exponents were obtained for lifetime expectation. This systematic study provides the guidelines for highly reliable flexible devices and the tools for determining the expected fatigue lifetime.

We trace Sn nanoparticles (NPs) produced from SnO2 nanotubes (NTs) during lithiation initialized by high energy e-beam irradiation. The growth dynamics of Sn NPs is visualized in liquid electrolytes by graphene liquid cell transmission electron microscopy. The observation reveals that Sn NPs grow on the surface of SnO2 NTs via coalescence and the final shape of agglomerated NPs is governed by surface energy of the Sn NPs and the interfacial energy between Sn NPs and SnO2 NTs. Our result will likely benefit more rational material design of the ideal interface for facile ion insertion.

Technologies for detecting and analyzing a single molecule help us understand and engineer numerous phenomena observed in nature. Carbon nanotubes (CNTs) are highly efficient molecular conduits due to their atomically smooth surface. Because of their small diameters, comparable to the size of a single molecule, even a single blocking molecule can obstruct CNT fluidic channels. Analyzing these pore-blocking events in CNTs therefore enables single-molecule studies. The high-aspect ratios of CNT channels, which extend the time scale of transport, allow for studying molecular transport that is too fast to record in other systems. Both theoretical studies and ensemble experimental measurements have verified the enhanced flow of various ions and molecular species in CNTs. Experimental measurements of a single-CNT fluidic channel, however, have only recently begun, demonstrating the detection of individual DNA, polymer, and alkali-metal ions. This article reviews recent advances in single-nanotube fluidic channels with a focus on experimental measurements.

The Sewol ferry disaster is one of the most tragic events in Korea’s modern history. Among the 476 people on board, which included Danwon High School students (324) and teachers (14), 304 passengers died in the disaster (295 recovered corpses and 9 missing) and 172 survived. Of the rescued survivors, 72 were attending Danwon High School, located in Ansan City, and residing in a residence nearby. Because the students were young, emotionally susceptible adolescents, both the government and the parents requested the students be grouped together at a single hospital capable of appropriate psychiatric care. Korea University Ansan Hospital was the logical choice, as the only third-tier university-grade hospital with the necessary faculty and facilities within the residential area of the families of the students. We report the experiences and the lessons learned from the processes of preparing for and managing the surviving young students as a community-based hospital. (Disaster Med Public Health Preparedness. 2017;11:389–393)

Surface pretreatment using Cl2 plasma was applied to n-type GaN and Ti/Al ohmic contacts with resistivity of ~ 10−6 Ω cm2, realized without annealing. Using synchrotron radiation photoemission spectroscopy, it was observed that the Fermi level moved by 0.5 eV toward the conduction band edge and the atomic ratio of Ga/N was increased by the treatment. This suggests that a number of N vacancies were produced at the treated surface and the Fermi level was pinned at the energy level of N vacancies near the conduction band. The N vacancies acting as donors for electrons produced a number of electrons, resulting in the near surface region to be in the degenerate state. Both the shift of Fermi level and the production of electrons at the treated surface lead to the reduction in contact resistivity through the decrease of the effective Schottky barrier for conduction of electrons.

The Ultra-Fast Flash Observatory (UFFO) is a space observatory for optical follow-ups of gamma ray bursts (GRBs), aiming to explore the first 60 seconds of GRBs optical emission. UFFO is utilized to catch early optical emissions from GRBs within few sec after trigger using a Gimbal mirror which redirects the optical path rather than slewing entire spacecraft. We have developed a 15 cm two-axis Gimbal mirror stage for the UFFO-Pathfinder which is going to be on board the Lomonosov satellite which is to be launched in 2013. The stage is designed for fast and accurate motion with given budgets of 3 kg of mass and 3 Watt of power. By employing stepping motors, the slewing mirror can rotate faster than 15 deg/sec so that objects in the UFFO coverage (60 deg × 60 deg) can be targeted in ~1 sec. The obtained targeting resolution is better 2 arcmin using a close-loop control with high precision rotary encoder. In this presentation, we will discuss details of design, manufacturing, space qualification tests, as well as performance tests.

The UFFO (Ultra-Fast Flash Observatory) is a GRB detector on board the Lomonosov satellite, to be launched in 2013. The GRB trigger is provided by an X-ray detector, called UBAT (UFFO Burst Alarm & Trigger Telescope), which detects X-rays from the GRB and then triggers to determine the direction of the GRB and then alerts the Slewing Mirror Telescope (SMT) to turn in the direction of the GRB and record the optical photon fluxes. This report details the calibration of the two components: the MAPMTs and the YSO crystals and simulations of the UBAT. The results shows that this design can observe a GRB within a field of view of ±35° and can trigger in a time scale as short as 0.2 – 1.0 s after the appearance of a GRB X-ray spike.

The Ultra-Fast Flash Observatory (UFFO), which will be launched onboard the Lomonosov spacecraft, contains two crucial instruments: UFFO Burst Alert & Trigger Telescope (UBAT) for detection and localization of Gamma-Ray Bursts (GRBs) and the fast-response Slewing Mirror Telescope (SMT) designed for the observation of the prompt optical/UV counterparts. Here we discuss the in-space calibrations of the UBAT detector and SMT telescope. After the launch, the observations of the standard X-ray sources such as pulsar in Crab nebula will provide data for necessary calibrations of UBAT. Several standard stars will be used for the photometric calibration of SMT. The celestial X-ray sources, e.g. X-ray binaries with bright optical sources in their close angular vicinity will serve for the cross-calibration of UBAT and SMT.

The Ultra-Fast Flash Observatory (UFFO) Pathfinder for Gamma-Ray Bursts (GRBs) consists of two telescopes. The UFFO Burst Alert & Trigger Telescope (UBAT) handles the detection and localization of GRBs, and the Slewing Mirror Telescope (SMT) conducts the measurement of the UV/optical afterglow. UBAT is equipped with an X-ray detector, analog and digital signal readout electronics that detects X-rays from GRBs and determines the location. SMT is equipped with a stepping motor and the associated electronics to rotate the slewing mirror targeting the GRBs identified by UBAT. First the slewing mirror points to a GRB, then SMT obtains the optical image of the GRB using the intensified CCD and its readout electronics. The UFFO Data Acquisition system (UDAQ) is responsible for the overall function and operation of the observatory and the communication with the satellite main processor. In this paper we present the design and implementation of the electronics of UBAT and SMT as well as the architecture and implementation of UDAQ.

Using immunostaining methodology, we traced the axonal projection of FMRFamide (Phe-Met-Arg-Phe-NH2)-like immunoreactive (LI) medial neurosecretory cells (MNCs) and lateral neurosecretory cells (LNCs) from the brain into the ventral nerve cord (VNC) and retrocerebral complex in Bombyx mori (L.) (Lepidoptera: Bombycidae). Of the seven pairs of FMRFamide-LI MNCs, one pair extended its axons from the brain pars intercerebralis into the VNC ipsilateral connective where they appeared to terminate. The axons of the remaining MNCs ran through decussation in the brain median region and contralateral nervi corporis cardiaci (NCC) I out of the brain, and eventually innervated the contralateral corpus cardiacum (CC). Axons from the single pair of FMRFamide-LI LNCs projected into the ipsilateral NCC II fused with NCC I without decussation in the brain, and finally terminated in the CC. These results suggest that transport of the FMRFamide-like neuropeptide from may be related to the modulation of functions such as gut contraction in MNCs terminating in the VNC, and regulation of production and/or secretion of specific hormones such as juvenile hormone in MNCs and LNCs terminating in the CC.

Boron-doped, single (∼54 nm) or double (∼21 + 54 nm) Si1−xGex layers were epitaxially grown on 300-mm-diameter p−-Si(100) device wafers with 20 nm technology node design features, by ultrahigh vacuum chemical vapor deposition. The Si1−xGex/Si wafers were annealed in the temperature range of 950–1050 °C for 60 s to investigate the effect of annealing on possible changes of Ge content and Si stress near the Si1−xGex/Si interface. High spectral resolution, micro-Raman spectroscopy was used as a nondestructive characterization technique with five excitation wavelengths of 363.8, 441.6, 457.9, 488.0, and 514.5 nm. Ge diffusion and generation of compressive stress at the Si1−xGex/Si interface were measured on all annealed wafers. Ge diffusion and the accumulation of compressive Si stress after annealing showed significantly different behaviors between single- and double-layer Si1−xGex/Si wafers. Raman characterization results were compared with secondary ion mass spectroscopy and high-resolution x-ray diffraction results.

AlGaN/InGaN heterostructure field effect transistors were grown on sapphire by metalorganic chemical vapor deposition. Transmission electron microscopy shows that there are no additional dislocations induced by inserting the InGaN channel while a variation of strain field across the channel is observed. The transistors exhibit good pinch-off characteristics with a threshold voltage of about −2.9 V and a saturation current density of 0.55 A/mm. At room temperature, a peak transconductance of 132 (mS/mm) was obtained for a 1.0 μm-device. Current gain cutoff frequency f T of 9.4 GHz and maximum oscillation frequency f max of 28.2 GHz were measured for the 1.0 μm-device. As the temperature is increased to 300 °C, the transconductance decreases to 50 mS/mm accompanied by a reduction of saturation current density of 0.24 A/mm due to the enhanced carrier scattering, gate leakage, and drain-source resistance.