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Two longitudinal superlattice structures of In2O3(ZnO)4 and In2O3(ZnO)5 nanowires were exclusively produced by thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. They consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8 % Sn. X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. High-resolution X-ray photoelectron spectrum suggests that In/Sn withdraw the electrons from Zn, and enhance the number of dangling-bond O 2p states, resulting in the reduction of band gap. Photoluminescence exhibit the peak shift of near band edge emission to the lower energy as the In/Sn content increases.
We report Mn-doped GaN nanowires exhibiting ferromagnetism even at room temperature. The growth of single-crystalline wurtzite structured GaN nanowires doped homogeneously with about 5 atomic % Mn was achieved by chemical vapor deposition using the reaction of Ga/GaN/MnCl2 with NH3. The ferromagnetic hysteresis at 5 and 300 K and the temperature-dependent magnetization curves suggest the Curie temperature around 300 K. Negative magnetoresistance of individual nanowires was observed at the temperatures below 100 K.
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