20 results
The Oxide/Nitride Interface: a study for gate dielectrics and field passivation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E8.5
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- 2003
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Ferromagnetic and Structural Properties of Mn-Implanted p-GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 674 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, T6.8
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- 2001
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Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 810-816
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- 2000
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GaN pnp Bipolar Junction Transistors Operated to 250°C
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T3.2.1
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- 2000
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Device Processing for GaN High Power Electronics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T7.1.1
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- 2000
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Effect of N2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G3.16
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- 2000
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Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.62
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- 1999
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 763-768
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- 1999
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Photoelectrochemical Etching of InxGa1−xN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 691-696
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- 1999
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RBS Lattice Site Location and Damage Recovery Studies in GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 933-939
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- 1999
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Photoelectrochemical Etching of InxGal-xN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.40
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- 1998
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Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar AND Cl2/He
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.56
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- 1998
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RBS Lattice Site Location and Damage Recovery Studies In GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G11.2
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- 1998
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Temperature Dependence of the Electrical Transport of Carbon Doped Gan
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- Journal:
- MRS Online Proceedings Library Archive / Volume 421 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 425
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- 1996
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W, WSix and Ti/Al Low Resistance Ohmic Contacts to InGaN, InN and InAlN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 421 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 373
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- 1996
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Incorporation of Thallium in IN1−xTIxP Grown by Metal Organic Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 379 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 511
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- 1995
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Carbon Implantation in AlX Ga1−X As
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- Journal:
- MRS Online Proceedings Library Archive / Volume 396 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 789
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- 1995
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Diffusion of Implanted Dopants and Isolation Species in III-V Nitrides
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- MRS Online Proceedings Library Archive / Volume 354 / 1994
- Published online by Cambridge University Press:
- 21 February 2011, 159
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- 1994
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Ion Beam Processing of InGaAsP
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- Journal:
- MRS Online Proceedings Library Archive / Volume 316 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 319
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- 1993
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Oriented Carbon Pair Defects Stabilized by Hydrogen in as-Grown GaAs Epitaxial Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 325 / 1993
- Published online by Cambridge University Press:
- 22 February 2011, 273
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- 1993
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