Abrasive blade dicing is the most common technique for die separation. In this work an alternative dry and non-abrasive die separation method, which is known as "Stealth dicing", is assessed for surface-sensitive MEMS (Micro Electro Mechanical Systems) wafers. The dicing performance and capability of the system is investigated on 200mm full thickness wafers with and without MEMS structures. The diced wafers are analyzed with respect to the silicon cutting quality, possible particle contamination, the condition of functional structures and their mechanical and electrical functionality. In addition the performance and limitations of two different Stealth Dicing Engine (SDE) types, SDE01 and SDE03, are compared to each other with respect to their performance on MEMS wafer dicing.
From this work design rules and proper dimensions of the scribe line can be determined. Process integration solutions, describing steps before and after the Stealth dicing process, including the contact-less dicing tape application to the wafer back side and the final die separation method by tape stretching, are presented. It was also found that the SDE03 laser with its outstanding performance in terms of process speed and separation quality can bring a breakthrough for applying this technology for MEMS wafers.