The study of cultural stability requires a knowledge of cultural development over a reasonably long span of time. The definition of this time perspective is one of the major contributions of archaeology to the study of culture. The archaeologist therefore should be in a position to make a significant contribution to the appraisal of the stability problem itself. However, the lack of a commonly accepted anthropological definition of the concept of cultural stability imposes semantic difficulties which hinder the determination of practical limits for the stability- instability problem area. Moreover, the nature of the data available to the archaeologist conditions the kind of contribution he can make.

The Holocene portion of the Siple Dome (Antarctica) ice core was dated by interpreting the electrical, visual and chemical properties of the core. The data were interpreted manually and with a computer algorithm. The algorithm interpretation was adjusted to be consistent with atmospheric methane stratigraphic ties to the GISP2 (Greenland Ice Sheet Project 2) ice core, 10Be stratigraphic ties to the dendrochronology 14 C record and the dated volcanic stratigraphy. The algorithm interpretation is more consistent and better quantified than the tedious and subjective manual interpretation.

We measured vertical strain in the firn at Siple Dome, Antarctica, using two systems, both of which measure relative displacements over time of metal markers placed in an air-filled borehole. One system uses a metal-detecting tuned coil, and the other uses a video camera to locate the markers. We compare the merits of the two systems. We combine steady-state calculations and a measured density profile to estimate the true vertical-velocity profile. This allows us to calculate a depth-age scale for the firn at Siple Dome. Our steady-state depth-age scale has ages ≈10-15% younger at any given depth when compared to depth-age scales derived by layer counting in a core 40 m away. The age of a visible ash layer at 97 m in the core is 665 ± 30 years, in agreement with a similar analysis conducted at Taylor Dome, Antarctica, where the same ash is also seen, providing an additional dated tie point between the two cores.

We introduce exact methods for the simulation of sample paths of one-dimensional diffusions with a discontinuity in the drift function. Our procedures require the simulation of finite-dimensional candidate draws from probability laws related to those of Brownian motion and its local time, and are based on the principle of retrospective rejection sampling. A simple illustration is provided.

Understanding the distribution of gas in and around galaxies is vital for our interpretation of galaxy formation and evolution. As part of the Arecibo Galaxy Environment Survey (AGES) we have observed the neutral hydrogen (HI) gas in and around the nearby Local Group galaxy M33 to a greater depth than previous observations. As part of this project we investigated the absence of optically detected dwarf galaxies in its neighbourhood, which is contrary to predictions of galaxy formation models. We observed 22 discrete clouds, 11 of which were previously undetected and none of which have optically detected counterparts. We find one particularly interesting hydrogen cloud, which has many similar characteristics to hydrogen distributed in the disk of a galaxy. This cloud, if it is at the distance of M33, has a HI mass of around 107 M⊙ and a diameter of 18 kpc, making it larger in size than M33 itself.

Recent studies suggest that sand can serve as a vehicle for exposure of humans to pathogens at beach sites, resulting in increased health risks. Sampling for microorganisms in sand should therefore be considered for inclusion in regulatory programmes aimed at protecting recreational beach users from infectious disease. Here, we review the literature on pathogen levels in beach sand, and their potential for affecting human health. In an effort to provide specific recommendations for sand sampling programmes, we outline published guidelines for beach monitoring programmes, which are currently focused exclusively on measuring microbial levels in water. We also provide background on spatial distribution and temporal characteristics of microbes in sand, as these factors influence sampling programmes. First steps toward establishing a sand sampling programme include identifying appropriate beach sites and use of initial sanitary assessments to refine site selection. A tiered approach is recommended for monitoring. This approach would include the analysis of samples from many sites for faecal indicator organisms and other conventional analytes, while testing for specific pathogens and unconventional indicators is reserved for high-risk sites. Given the diversity of microbes found in sand, studies are urgently needed to identify the most significant aetiological agent of disease and to relate microbial measurements in sand to human health risk.

The kesterite semiconductor Cu2ZnSnS(e)4 is seen as a suitable absorber layer to replace Cu(In,Ga)Se2 in thin film solar cells, if thin film photovoltaics are to be deployed on the terawatt scale. Currently the best devices, and hence the best kesterite absorber layers are grown away from stoichiometry and are zinc rich and copper poor, presumably leading to the formation of ZnS(e). However, it has been shown that secondary phases present in an absorber layer reduce device performance. If growth in Zn rich conditions seems to be mandatory, then any secondary phases formed should be grown on the surface of the absorber layer so that they may be easily removed by etching. Therefore, it is important to know how and why secondary phases form, and if possible, how to segregate them to the surface of the absorber layer.

Here we show that ZnSe is formed at the initial stages of absorber formation from annealing metal stacks in selenium vapor. Further we demonstrate that the way the precursor metals are distributed on the substrate leads to different absorber layer performances in full devices. The importance of selenium vapor pressure is highlighted in respect to the order of selenisation of the metals, Zn before Cu. Additionally, the importance of selenium and tin selenide vapor pressure during annealing is reviewed with regard to avoiding a decomposition of the Cu2ZnSnSe4 to ZnSe and Cu2Se phases. Regardless of the atmosphere above the absorber, the reaction of the absorber with molybdenum appears unavoidable without the use of a passivation strategy. Counter-intuitively, it is demonstrated that for our absorber layers grown under Zn-rich conditions, removal of the ZnSe is harmful for device performance.

Child neglect is the most prevalent form of child maltreatment in the United States, and poses a serious public health concern. Children who survive such episodes go on to experience long-lasting psychological and behavioral problems, including higher rates of post-traumatic stress disorder symptoms, depression, alcohol and drug abuse, attention-deficit/hyperactivity disorder, and cognitive deficits. To date, most research into the causes of these life-long problems has focused on well-established targets such as stress responsive systems, including the hypothalamus–pituitary–adrenal axis. Using the maternal separation and early weaning model, we have attempted to provide comprehensive molecular profiling of a model of early-life neglect in an organism amenable to genomic manipulation: the mouse. In this article, we report new findings generated with this model using chromatin immunoprecipitation sequencing, diffuse tensor magnetic resonance imaging, and behavioral analyses. We also review the validity of the maternal separation and early weaning model, which reflects behavioral deficits observed in neglected humans including hyperactivity, anxiety, and attentional deficits. Finally, we summarize the molecular characterization of these animals, including RNA profiling and label-free proteomics, which highlight protein translation and myelination as novel pathways of interest.

Amorphous thin films of composition TixSi1−xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(OiPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. Films were amorphous to X-rays as deposited and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1−xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the flow of N2 through the precursor vessels or the deposition temperature. For the case of TN-TEOS x remained close to 0.5. The results suggested the existence of a specific chemical reaction between TN and TEOS prior to film deposition.

The CVD of zirconium dioxide (ZrO2) films from zirconium tetra-tert-butoxide {Zr[OC(CH3)3]4} is also described. The films, which were deposited on Si(100), were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), ellipsometry, X-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). Deposition was studied between ∼380 and 825 °C, and at precursor pressures between 4 × 10−5 and 1 × 10−4 Torr. The kinetics for steady-state growth were studied as functions of temperature and precursor pressure. Results were fit to a two-step kinetic model involving reversible precursor adsorption followed by irreversible decomposition to ZrO2.

Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)4 and either Ti(O-iPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. As-deposited films were amorphous to X-rays and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the deposition conditions. For the case of TN-TEOS x remained close to 0.5 under all conditions studied. One explanation is the existence of a specific chemical reaction between TN and TEOS prior to film deposition. TEOS was mixed with a CCl4 solution of TN at room temperature to produce an amorphous white powder (Ti/Si = 1.09) and 1HNMR of the CCl4 solution indicated resonances attributable to ethyl nitrate.

We have used X-ray Photoelectron Spectroscopy to study the chemical interactions at the interface formed during in situ deposition of Ti atoms on triazine, polyimide (PMDAODA), and polystyrene surfaces. For deposition on thin triazine films (∼ 100Å) we observe that titanium carbide is the dominant product, while oxides and nitrides are formed as well. Aging in air causes the carbide and nitride to convert to the more thermodynamically stable oxide. Titanium carbide is also the primary species at the Ti/polyimide and Ti/polystyrene interface. In all cases the reaction of Ti atoms with different sites in the polymer is nonselective.

We have fabricated ordered arrays of gold nanocrystals on FIB-processed silicon substrates using electroless deposition. We have also fabricated ordered arrays of silver nanocrystals on silicon with diameters 40–60 nm separated by 180 nm center-to-center, using pulsed-laser deposition (PLD) to deposit silver on the substrate. The metal nanocrystal arrays are characterized using SEM as well as AFM and energy dispersive x-ray (EDX) analysis. AFM confirms particle sizes measured in SEM, and EDX analysis demonstrates that Ag preferentially clusters at sites that have been damaged by the ion beam. These results suggest that the FIB-PLD combination can be used to create ordered arrays of Ag nanocrystals with diameters of 10 nm or less.

A numerical tool is developed to simulate the optical and thermal interactions of selected lasers with precursors and substrates in support of the emerging technology for the direct write of Mesoscopic Integrated Conformal Electronics (MICE). The code couples the Discrete Ordinate Method (DOM) radiation model with the multi-physics computation fluid dynamics code CFD-ACE to predict the conductive and radiative heat transport in the process

This paper provides a brief overview of the numerical model. Selected simulations are presented including comparison with empirical data. The capabilities, limitations, and potential applications of the model with respect to MICE are discussed. Future model enhancements are proposed

Due to its low resistivity and excellent thermal stability, IrO2 has attracted attention as an alternative for electrode material in ferroelectric integrated circuit applications. In this work, IrO2 films deposited using reactive DC magnetron sputtering were studied. Film properties such as resistivity, crystallinity and morphology were examined as a function of deposition condition. Optimum process parameters to obtain high quality IrO2 thin films are suggested.

A side-by-side comparison of the TiO2 deposition kinetics and the corresponding film microstructures using titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate was conducted at low pressures (< 10−4 Torr) in an ultrahigh vacuum chemical vapor deposition reactor. Titanium(IV) nitrate exhibited a lower activation energy of reaction (Er= 98 kJ/mol) which allowed deposition at lower temperatures compared to titanium(IV) isopropoxide (Er= 135 kJ/mol). Comparison of the microstructures of films deposited at similar temperatures revealed significant differences in the reaction rate limited kinetic regime. As the growth rates of the two precursors converged in the flux-limited regime, the respective microstructures became indistinguishable.