There are multiple recent reports of an association between anxious/depressed (A/D) symptomatology and the rate of cerebral cortical thickness maturation in typically developing youths. We investigated the degree to which anxious/depressed symptoms are tied to age-related microstructural changes in cerebral fiber pathways. The participants were part of the NIH MRI Study of Normal Brain Development. Child Behavior Checklist A/D scores and diffusion imaging were available for 175 youths (84 males, 91 females; 241 magnetic resonance imagings) at up to three visits. The participants ranged from 5.7 to 18.4 years of age at the time of the scan. Alignment of fractional anisotropy data was implemented using FSL/Tract-Based Spatial Statistics, and linear mixed model regression was carried out using SPSS. Child Behavior Checklist A/D was associated with the rate of microstructural development in several white matter pathways, including the bilateral anterior thalamic radiation, bilateral inferior longitudinal fasciculus, left superior longitudinal fasciculus, and right cingulum. Across these pathways, greater age-related fractional anisotropy increases were observed at lower levels of A/D. The results suggest that subclinical A/D symptoms are associated with the rate of microstructural development within several white matter pathways that have been implicated in affect regulation, as well as mood and anxiety psychopathology.

In this paper, we investigated the effects of the substrates and crystalline orientations on the mechanical properties of Pb(Zr0.52Ti0.48)O3 thin films. The PZT thin films were deposited by sol-gel method on platinized silicon substrates with different types of layer materials such as silicon nitride and silicon oxide. The crystalline orientations of PZT thin films were controlled by combined parameters of a chelating agent and pyrolysis temperature. A nanoindentation CSM (continuous stiffness measurement) technique was employed to characterize the mechanical properties of those PZT thin films. It was observed that (001/100)-oriented films show a higher Young’s modulus compared to films with mixed orientations of (110) and (111), indicating a clear dependence on film orientation. The influence of substrates on the mechanical properties of PZT thin films was also characterized. Finally, no significant influence of the film thickness was found on the mechanical properties of films thicker than 200 nm.

We report the fabrication and characterization of segmented element power generator modules of 16 x 16 thermoelectric elements consisting of 0.8 mm thick Bi2Te3 and 50 μm thick ErAs:(InGaAs)1-x(InAlAs)x with 0.6% ErAs by volume. Erbium Arsenide metallic nanoparticles are incorporated to create scattering centers for middle and long wavelength phonons, and to form local potential barriers for electron filtering. The thermoelectric properties of ErAs:(InGaAs)1-x(InAlAs)x were characterized in terms of electrical conductivity and Seebeck coefficient from 300 K up to 830 K. Generator modules of Bi2Te3 and ErAs:(InGaAs)1-x(InAlAs)x segmented elements were fabricated and an output power of 6.3 W was measured. 3D finite modeling shows that the performance of thermoelectric generator modules can further be enhanced by the improvement of the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.

The dependence of electrical resistivity on specimen temperature and imposed tensile strains was determined for shape memory polyurethane (SMPU) composites of carbon nanofiber (CNF), oxidized carbon nanofiber (ox-CNF), and carbon black (CB). The SMPU composites with crystalline soft segments were synthesized from diphenylmethane diisocyanate, 1,4-butanediol, and poly(caprolactone)diol in a low-shear chaotic mixer and in an internal mixer. The materials synthesized in the chaotic mixer showed higher soft segment crystallinity and lower electrical percolation thresholds. The soft segment crystallinity reduced in the presence of CNF and ox-CNF; although the reduction was lower in the case of ox-CNF. The composites of CB showed pronounced positive temperature coefficient (PTC) effects which in turn showed a close relationship with non-linear thermal expansion behavior. The composites of CNF and ox-CNF did not exhibit PTC effects due to low levels of soft segment crystallinity. The resistivity of composites of CNF and ox-CNF showed weak dependence on strain, while that of composites of CB increased by several orders of magnitude with imposed tensile strain. A corollary of this study was that a high level of crystallinity may cause a PTC effect and prevent any actuation through resistive heating. However, a carefully tailored compound which has reduced crystallinity and which requires minimum amount of filler may prevent PTC phenomenon and could supply necessary electrical conductivity over the operating temperature range, while offering enough soft segment crystallinity and rubberlike properties for excellent shape memory function.

Various superior properties of SiC such as high thermal conductivity, chemical and thermal stability and mechanical robustness provide the basis for electronic and MEMS devices of novel design [1]. This work evaluates heterostructures that consist of a few nanometers-thick 3C-SiC films on silicon substrates. Nano-thin SiC films differ significantly in their electrical behavior compared to the bulk material [2], a finding that gives rise to a potential use of these films as surface sensors. To gain a better understanding of the effect of surface states on the electrical response of these thin, strained films, several metal-semiconductor-metal heterostructures have been examined under variable conditions. The nano-thin, strained films were grown using gas source molecular beam epitaxy. Reflection high-energy electron diffraction patterns obtained from several 3C-SiC films indicate that these films are strained nearly 3% relative to the SiC lattice constant. Al, Cr and Pt contacts to a nano-thin film 3C-SiC were deposited and characterized. I-V measurements of the strained nano-thin films demonstrate metal-semiconductor-metal characteristics. Band offsets due to biaxial tensile strain introduced within the 3C-SiC films were calculated and band diagrams incorporating strain effects were simulated. Electron affinity of 3C-SiC has been extracted from experimental I-V curves and is in good agreement with the value that has been calculated for a strained 3C-SiC film [3]. On the basis of experimental and simulation results, an empirical model for the current transport has been proposed. Fabricated devices have been characterized in a controlled environment under hydrogen flow and also in a reactive ambient, while heating the sample and oxidizing the surface, to investigate the effects of the environment on the surface states. Observed changes in I-V characteristics suggest that these nano-thin films can be used as surface sensors.

ABSTRACT Magnetoelastic materials are amorphous, ferromagnetic alloys that usually include a combination of iron, nickel, molybdenum and boron. Magnetoelastic biosensors are mass sensitive devices comprised of a magnetoelastic material that serves as the transducer and bacteriophage as the bio-recognition element. By applying a time varying magnetic field, the magnetoelastic sensor thin films can be made to oscillate, with the fundamental resonant frequency of oscillations depends on the physical dimensions and properties of the material. The change in the resonance frequency of these mass based sensors can be used to evaluate the amount of analyte attached on the sensor surface. Filamentous bacteriophage specific to S. typhimurium was used as a bio-recognition element in order to ensure specific and selective binding of bacteria onto the sensor surface. The sensitivity of magnetoelastic materials is known to be dependent on the physical dimensions of the material. An increase in sensitivity from 159Hz/decade for a 2mm sensor to 770Hz/decade for a 1mm sensor and 1100Hz/decade for a 500micron sensor was observed. The sensors were characterized by scanning electron microscopy (SEM) analysis assayed biosensors to provide visual verification of frequency responses and an insight into the characteristics of the distribution of phage on the sensor surface. The magnetoelastic sensors immobilized with filamentous phage are suitable for specific and selective detection of target analyte in different media. Certain modifications to the measurement circuit resulted in better signal to noise ratios for sensors with smaller dimensions (L<1mm). This was achieved by tuning the circuit resonance close to that of the sensor. According to models and preliminary tests, this method was anticipated in about a 5 times increase in signals for a 200×40×6microns. This technique and further studies into the design and modification of the measurement circuits could yield better, sensitive responses for sensors with smaller dimensions. The magnetoelastic materials offer further advantages of potential miniaturization, contact-less nature and ease of operation.

The single crystal growth of layered semiconductors GaSe and GaTe by vertical Bridgman technique using zone refined selenium (Se), tellurium (Te) and high purity (HP) gallium (Ga) have been described. The grown crystals (2.5 cm diameter and ∼10 cm long) have demonstrated efficient broadband tunable THz emission and as sensitive THz detectors. The crystals have shown promising characteristics with good optical quality, high dark resistivity, wide band gap (GaSe-2.01 eV and GaTe-1.66 eV at 300 K), good anisotropic (parallel, p & perpendicular, pa) electrical properties (σ∥ vs σ⊥ and μ∥ vs σ⊥) and long term stability. Different steps involved in processing GaSe and GaTe crystals as THz sources and sensors are described.

The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3–PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-μm thick, were grown on (100) SrRuO3/(100) LaAlO3 substrates by pulsed laser deposition from a BiScO3–PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tanδ = 0.08, and maximum dielectric constant of 5530 at 455 °C. Well-saturated hysteresis loops with a remanent polarization of 42 μC/cm2 and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e31,f was −12 C/m2. This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O3 films (e31,f ∼ –12 C/m2) while the transition temperature is 100 °C higher.

Oxygen diffusion into c-axis-oriented YBa2Cu3O7-δ epitaxial thin films was observed using real-time spectroscopic ellipsometry. The experiments were conducted under controlled atmospheres of 10% O3/90% O2 and 80% O3/20% O2. At 2 × 10-5 torr, oxidation of the films began at temperatures as low as 100–125 °C for heating rates ≤3 °C/min. Full oxidation was seen by 190 °C at these rates. Based on these data, the activation energy of oxygen diffusion into YBa2Cu3O7-δ from an ozone/oxygen atmosphere was found to be between 0.43 and 0.52 eV. This was appreciably smaller than for in-diffusion in a molecular oxygen atmosphere. Higher ozone content atmospheres did not improve the oxidation kinetics. These atmospheres did, however, delay the onset of reduction in the films by 60–70 °C at higher temperatures.

Thin film capacitor structures of Au / (1−x)Pb(Mg1/3Nb2/3)O3 - xPbTiO3 /(La1/2Sr1/2)CoO3 were fabricated by pulsed laser deposition on single crystal {001} MgO substrates. Films were found to be perovskite dominated and highly {001} oriented. Dielectrically, films displayed relaxorlike features, though maximum permittivity was low compared to single crystal or bulk ceramic (∼1400 at peak @1kHz, for x=0.07, 0.1 & 0.2). A field induced piezoelectric coefficient d33 was measured by piezoresponse atomic force microscopy for specific compositions x =0, × =0.07, and x =0.1 and found to be disappointingly low - indicating poor electric field induced strain. Despite this macroscopic electrostrictive coefficients Q33 were found to be (3.6 ± 0.6) ×10−2C−2m4, (2.6 ± 0.2) ×10−2C−2m4, and (0.9 ± 0.3) ×10−2C−2m4 respectively. Crystallographic electrostrictive coefficients were determined by in-situ x-ray diffraction and found to be (4.9 ± 0.2) ×10−2C−2m4 for PMN-(0.07)PT and (1.9 ± 0.1) ×10−2C−2m4 for PMN-(0.1)PT. Considering that all these Q33 values are of the same order of magnitude as found in single crystal experiments (2.5 – 3.8 ×10−2C−2m4), it is suggested that low out-of-plane strain is entirely a result of reduced polarisability rather than reduced electrostrictive coefficients in thin films relative to bulk ceramic or single crystal. An estimate was also made of the Q13 electrostrictive coefficient for PMN and PMN-(0.07)PT by measuring permittivity as a function of applied in-plane strain. The values obtained were -1.31 ×10−2C−2m4 and -0.46 ×10−2C−2m4 respectively.

The nonrelativistic motion of a charged particle in the electromagnetic field of a plane wave is studied. New analytic solutions of the equation of motion are found that manifest the dependence of the period of the particle motion on the wave amplitude.

Epitaxial SrRuO3 films were prepared on (001) SrTiO3 substrates by pulsed laser deposition. The film structure was characterized by 4-circle x-ray diffraction and the electrical behavior by temperature dependent resistivity measurements. With variations in the deposition conditions, significant changes in both structural and electrical properties were observed. When deposited under conditions favoring appreciable energetic bombardment, the SrRuO3 films on SrTiO3 exhibited extended in and out-of-plane lattice constants and increased values of resistivity; in addition, a depression of the Curie temperature was measured. SrRuO3 deposited under less aggressive conditions displayed structures and properties more similar to those associated with bulk crystals.

Novel designs of the force sensing components for an atomic force microscope (AFM) and lateral force microscope (LFM) have been proposed in this study. By using PZT thin layers, a smart structure that can perform force sensing and feedback actuation at the same time is applied to the AFM. Clear images can be derived by an AFM equipped with this smart structure. A structure of two parallel PZT bars integrated on a SiO2 free standing cantilever has shown potential for operation in an LFM, because a difference in the piezoelectric charge outputs from these two beams will be induced by frictional force when the cantilever end quasi-staticly contacts with the sample surface in dynamic scanning across the surface.

This paper presents new organic vapor sensitive device using anodized porous silicon (PS). The sensor has aluminum (Al)/PS/p-Si/Al Schottky diode structure and sensitivity at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol is about 4, 5, 10 and 40 times respectively. The sensitivity in 800–2600 ppm ethanol vapor is 2 to 40 times. The diode sensor can be converted into an Al/PS/Al resistor sensor by switching the electrical contacts, and the sensitivity is about 500 times for a humidity change of 43–75%. All sensors have response time of about 0.5 min. The sensitivity is stable with time and the PS sensor can be integrated into VLSI Si devices to form novel microelectronic systems.

The TiNi shape memory alloy wires were plasma coated by α-Al2O3 ceramics and afterwards they were cast into Ti6Al4V or Ti6Al1.5V2.5Nb (Ti-alloy) matrix. The wire fibers melt and the alumina ceramics reacts with both TiNi and Ti-alloy if cooling rate is small. The interphases which are formed are Ti2(Al, Ni) and Ti3AL-type phases, respectively. The structure of TiNi wires changes to dendritic one, Ti-alloys contain 10 to 15% of primary α and transformed β phase. The optimal conditions for rolling are 900°C with reductions of 5%. At this conditions all the constituents of composite material can be deformed plastically. The adhesive strength of TiNi/Al2O3 is 60 MPa.

In the present work the use of single-crystals of Cu-Zn-Al Shape Memory Alloys (SMA) in actuator applications is analyzed. The actuator considered here, a device capable of doing work in response to temperature changes, is based on a single-crystal nucleus of a Cu-Zn-Al SMA coupled to a conventional spring that represents the load to be displaced. A special experimental stage was designed for performing controlled thermal cycles under load. In this way the effects of different parameters (cycle number, friction, temperature range, load level) on the actuator behavior can be studied. From the results obtained, the use of a single-crystal of an SMA in a thermostatic device is analyzed and compared with the commercial wax actuator performance.

Over the past several years interest in adaptive ‘smart'materials development has gained momentum. Smart structures utilize both polymeric sensors and lead-based piezo-ceramic actuators. This paper addresses the development of an alternative smart material which consists of a novel lead-free piezo-ceramic/PVDF hybrid composite, to be used as a single component system capable of performing multiple tasks. A lead-free controlled porosity perovskite ceramic of the type A2B2O7 (Sr2 (Nb.5Ta.5)2O7 was developed utilizing hot forging. Long, oriented grains along the x-y plane, perpendicular to the forging direction were obtained in the ceramics. PVDF was subsequently infiltrated into the porous piezo-ceramic resulting in a three dimensional architecture in which the piezo-ceramic is oriented perpendicular to the PVDF. It is anticipated that manufacturability combined with the ease of functional tailorability of such a class of lead-free hybrid materials can be useful in a variety of smart structures applications.