Transparent electronics is an embryonic technology whose objective is the realization of invisible electronic circuits. We have recently reported the fabrication of a novel n-channel transparent thin-film transistor (TTFT).  This ZnO-based TTFT is highly transparent and exhibits electrical characteristics that appear to be suitable for implementation as a transparent select-transistor in each pixel of an active-matrix liquid-crystal display. Moreover, the processing technology used to fabricate this device is relatively simple and appears to be compatible with inexpensive glass substrate technology. The objective of the work reported herein is to summarize some of our recent TTFT electrical performance results. Materials, processing, and device structure details related to these devices appear in future publications.