In this paper the effect of different annealing conditions on boron diffusion is studied for 3 nm gate dielectrics. The use of amorphous material instead of polycrystalline material and the influence of nitridation (two-step N2O oxidation) was investigated. A better control on the flatband voltage (VFB) shift was observed for amorphous-Si gate as compared to polycrystalline-Si gate. A reduction in VFB was observed for N2O oxides as compared to pure oxides, but VFB was still above the ideal value for some of the thermal treatments. A significant reduction in QBD is observed for p+ gates as compared to n+ gates. The lowest post-implantation anneal gives the highest QBD for all the different combinations.