Selective-area epitaxy was investigated by Cl-transport VPE growth of GaxIn1-xAs in features etched in a (001) InP wafer through windows of an SiCO2 mask. Growth was conducted simultaneously on masked samples with grooves oriented along the  and the  directions and a planar InP wafer oriented 3° off (001). The structures were studied with optical and cross-sectional transmission electron microscopy (TEM), X-ray diffraction, photoluminescence (PL), and cathodoluminescence (CL). Excellent surface morphology, luminescence, and near-lattice-matching were simultaneously achieved for all samples. TEM cross-sections demonstrate that the  and even the  dove-tail grooves are filled in a wellordered manner without visible defects or undue strain. CL imaging in crosssection and planview demonstrates the trend in both samples for lower bandgap material to be found in the upper center portion of the groove.