The effects of alloy fluctuations, defect densities, and short-range clustering on the resonance behavior of first and second order LO and TO Raman scattering are studied in Hg1−xCdxTe (MCT). X-values between 0.20 and 0.32 and photon energies from 2.35 to 2.7 eV were used with samples prepared by a wide range of techniques--LPE, MOCVD, MBE, bulk growth, and pulsed laser annealing. We examine the resonance behavior of the HgTe-like TO mode at ∼120 cm−1 and the mode at 133 cm−1, which has been identified as originating from the preferential clustering of 3 Hg and 1 Cd about the Te. We find that the intensity of this peak for various bulk and epitaxially grown samples is unusually large only near the E, resonance. Pulsed laser annealing with a Nd:YAG-pumped dye laser strongly suppresses this mode in all samples suggesting that extremely rapid epitaxial regrowth may inhibit the 3:1 cluster formation. In addition, the resonance-enhanced LO overtones are suppressed by the pulsed laser anneal.