Foods and dietary patterns that enhance satiety may provide benefit to consumers. The aim of the present review was to describe, consider and evaluate research on potential benefits of enhanced satiety. The proposal that enhanced satiety could only benefit consumers by a direct effect on food intake should be rejected. Instead, it is proposed that there is a variety of routes through which enhanced satiety could (indirectly) benefit dietary control or weight-management goals. The review highlights specific potential benefits of satiety, including: providing appetite control strategies for consumers generally and for those who are highly responsive to food cues; offering pleasure and satisfaction associated with low-energy/healthier versions of foods without feeling ‘deprived’; reducing dysphoric mood associated with hunger especially during energy restriction; and improved compliance with healthy eating or weight-management efforts. There is convincing evidence of short-term satiety benefits, but only probable evidence for longer-term benefits to hunger management, possible evidence of benefits to mood and cognition, inadequate evidence that satiety enhancement can promote weight loss, and no evidence on which consumers would benefit most from satiety enhancement. The appetite-reducing effects of specific foods or diets will be much more subtle than those of pharmaceutical compounds in managing hunger; nevertheless, the experience of pharmacology in producing weight loss via effects on appetite suggests that there is potential benefit of satiety enhancement from foods incorporated into the diet to the consumer.

Clasts of metamorphosed Cadomian granites from the ∼50—60 Ma Carpathian flysch in Gródek near the Rożnowskie Lake (Silesian Unit, SE Poland) are studied. They are considered to represent the Silesian Ridge, one of the hypothetical, currently unexposed source areas that supplied Carpathian sedimentary basins with clastic material. The gneisses preserve several examples of corona textures that include cores of primary monazite surrounded by polygonal grains of secondary apatite with thorianite inclusions, with intermediate zones of lamellar grains of secondary monazite and outermost rims of clay minerals, or various combinations thereof. Preservation of the complete textures is rare with polygonal apatite with thorianite inclusions, lamellar grains of monazite and clay minerals being particularly prevalent. Locally, polygonal apatite with thorianite inclusions surrounded by allanite and REE-epidote corona with a bastnasite-synchysite phase occurs also. The textures observed developed during primary monazite breakdown and replacement by secondary minerals. The variation in reaction products indicates that alteration was strictly dependent on the local chemical system.

In an attempt to demonstrate the pathogenicity of a newly discovered mycoplasma (strain G37) isolated from the human genital tract, six female marmosets (Callithix jacchus) were inoculated intravaginally. Four of the animals were infected as indicated by repeated recovery of the organisms on vaginal swabbing, and infection persisted for 72–149 days or more. In addition, the infected marmosets exhibited a serum antibody response detected most easily by an immunofluorescence technique, and a persistent vaginal polymorphonuclear leucocyte response not seen in two uninfected and in two uninoculated animals.

Xasta flies appear to segregate five types of gametes in unequal numbers, namely two which contain both or neither of the chromosomes affected by the translocation and inversions, two further classes which contain one affected and one unaffected chromosome, and finally the remainder which have an unbalanced chromosomal content. These conditions are necessary to fit the results observed in crosses involving the Xasta stock. Xasta exhibits balanced polymorphism under crowded conditions and this may be due to the production of toxic substances by Xa larvae which delay the development of wild type-larvae.

Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

A very thin bicrystal film, prepared by depositing gold onto a {111} germanium substrate, then annealing and removing it, has been studied by HREM. The crystals grow predominantly in the orientations {111} and (111) which are related by a 60° rotation (Σ3 CSL) and bounded by {121} facets. In contrast to the boundaries studied in thicker films, these {112} facets extend through the depth of the film. Another crystal within the film also had a {111} orientation, but rotated by around 20° from the other crystals. A short length of boundary was found that was edge-on, symmetrical, facetted on (213) planes, and corresponding to Σ;7 (or Σ;21). A copper 1111 film did not show edge-on boundaries

The rigid body translation across the facets were measured and found to vary depending on the proximity to facet junctions. An expansion at the boundary was the general case

In this paper, the ordering of ternary semiconductor compounds is briefly reviewed by means of a coordination polyhedron model. Long-range ordering of chalcopyrite and CuAu-type structures can be represented as an array of repeating A2B2 tetrahedra. A CuAu-type ordered phase in a chalcopyrite AIBIIICVI 2 compound is surrounded by an A3B+ AB3 boundary, whereas a CuPt-type ordered phase in a zinc-blende (A, B)IIICV compound is surrounded mainly by A2B2 type tetrahedra and thus restricted in size. Following the description of the ordered structure model, the detection of the asymmetry in ordering directions in (A, B)IIICV compounds is discussed. Some examples that employ transmission electron microscopy are presented.

Knowledge about compositional profiles on an atomic scale is important for semiconductor multilayers. In this paper, we attempt to quantify the Ti atomic fraction in a TixAll–xN multilayer and the total As concentrations in As δ-doped layers using energy-filtered imaging. These two materials represent materials where the characteristic energy loss edges are located in widely different energy losses with the L edge of Ti being above 450eV and that of As around 1350eV. The accuracy of the Ti atomic fraction in TixAll–xN is found to be around 10at% for specimens of uniform thickness made by focused ion beam milling, whereas the resolution and As concentration for the As containing δ-layer is found to be dominated by the signal to noise ratio.

A Transmission Electron Microscopy (TEM), Photoluminescence (PL) and Photoluminescence Excitation Spectroscopy (PLE) investigation has been conducted on Ga0.52In0.48P epilayers grown on (001) GaAs substrates by Gas-Source Molecular Beam Epitaxy.For Ga0.52In0.48P epilayers grown on exact (001) GaAs substrates, increasing the growth temperature from 480°C to 535°C increased the antiphase domain plate thickness, t, from 7.3±0.4 to 17.4±0.9 Å, and decreased the long range order parameter, n, from 0.32 to 0.18±0.1. For epilayers grown at 530°C, on GaAs(001) substrates off-cut 0°, 7°, 10° and 15° towards [111]A, increasing the substrate misorientation from 0° to 15° decreased the antiphase domain plate thickness, from 12.3±0.6 to 6.0±0.3 Å. The long range order parameter also decreased from 0.19 to 0.10±0.01.

The band gap energies of these samples, grown by GS-MBE, were close to those reported for fully disordered Ga0.52In0.48P epilayers grown by MOCVD at ∼760°C. This shows that GSMBE is also a good technique to grow GaInP for high band gap optical data storage applications and at lower growth temperatures. The optimum growth conditions in this study were at a growth temperature of 530°C on (001) GaAs substrate with 15° off-cut towards [111]A.

The latest transmission electron microscopes with field emission guns and imaging filters now provide much of the microanalysis and imaging necessary in applications such as ULSI device development. The installation and operating environment of the instruments are critical to their successful operation. Information from two such installations is presented here, one in a purpose built facility and the other in an existing building. Ground vibration, acoustic noise, stray electromagnetic fields, air flow and temperature variation are considered, and the measures implemented to achieve desirable levels of each parameter are discussed. The physical layout of an installation is also shown.

The microstructural evolution of the GaSe/GaAs(100) thin film system was characterized by high resolution transmission electron microscopy (HRTEM). The relationship of crystallographic orientation between the GaSe thin film and the GaAs substrate is [011]GaAs ‖ [1100]GaSe/(100)GaAs ‖ (0001)GaSe, with the dominant polytype for the GaSe thin film being a γ-type which has a 3R-rhombohedral structure with R3m space group. An intermediate layer was observed between the GaAs substrate and the GaSe thin film, with a structure distinct from that of either GaAs or GaSe. The result of a fast Fourier transform (FFT) of the lattice image corresponding to the intermediate layer indicated that its crystal structure was associated with that of α-Ga2Se3. A new vacancy ordered structural model of β-Ga2Se3 was suggested.