High quality ZnS epilayers were grown on GaAs and GaP substrates by hot wall epitaxy. The optimum temperature conditions for high quality ZnS epilayer were found. The photoluminescence(PL) spectrum of high quality ZnS epilayers showed sharp and narrow exciton peaks and no self-activated peaks. The room temperature energy gap of ZnS/GaAs was found to be 3.729 eV from the experimentally observed free exciton PL peaks. The temperature dependence of the PL intensity showed a two step quenching process and the temperature dependence of the PL linewidth broadening was tried to analyze in terms of exciton scattering process. From the splitting of the heavy hole and the light hole exciton peaks, the strain was identified.