While measurement of magnetostriction in bulk materials is readily accomplished using a strain gauge, measurement of this quantity for thin films presents a greater challenge, and typically involves measurement of the overall wafer curvature (for a film of uniform composition) as a function of field. In order to evaluate magnetostriction locally in composition-spread samples, we have developed a method using a dense array of pre-fabricated cantilever beams on a silicon substrate prepared using MEMS techniques. Differential strain in the thin film/cantilever system results in curvature which is detected using an optical (laser/position-sensitive-detector) system. A magnetic field is applied using two orthogonal Helmholtz coils, and the resulting deflection-field curves are used to determine the saturation magnetostriction λs as well as dλ/dH. Our composition-spread films are prepared using a three gun on-axis magnetron cosputtering system. The position-dependent composition is inferred using rate calibrations and verified with electron microprobe and Rutherford Backscattering Spectroscopy. Preliminary experiments have validated the technique and the system has been used to measure magnetostriction in the Ni-Fe system. Our approach can also be used to measure properties of giant magnetostrictive materials (e.g. TbFe/Fe multilayers) as a function of layer thicknesses, or thin film shape-memory alloys, including magnetic shape-memory alloys.