One of the important reliability challenges in integrating copper/Low-K dielectric technology has been adhesion between the Low-K dielectric and barrier metal. This investigation explored the applicability of the four-point bend technique for determining the adhesion strength of a fluorine doped low dielectric constant oxide in contact with tantalum barrier layer. Time of flight secondary ion mass spectroscopy (ToFSIMS) was used for surface chemical analyses of the delaminated surfaces to identify the fractured interface and its chemical compositions. The effect of annealing on mechanical strength was coupled with chemical analysis to discern the adhesion properties. Experimental results suggested that fluorine rich interfacial layer formation was associated with degraded adhesion characteristics between Low-K dielectric and tantalum barrier metal.