In this study, we have investigated the effectiveness of semimetallic, amorphous carbon films as a liftoff mask in the selective growth, by OMVPE, of GaInP epitaxial layers, on (001) oriented GaAs substrates. Scanning electron microscopy, cathodoluminescence spectroscopy and EDX analysis have been employed to characterize the epitaxial material. Our results show excellent selectivity with little nucleation taking place on the amorphous carbon mask in the region of the patterned openings. Liftoff of the carbon mask was very easily achieved, leaving no unintentional nucleation on the substrate below. Investigations in the AlGaAs/GaAs system did not yield the same degree of selectivity with this mask, but the polycrystalline film that deposited on the mask was cleanly lifted from the substrate by the liftoff of the mask.