The formation of TiSi2 thin films using the SALICIDE process on doped and undoped silicon substrates was studied. XRD TEM, AES, RBS and four probe Rs were used to characterize the material. Unit cell parameters and energetics were determined. Results confirm electrical and chemical signatures consistent with the known C49 conversion to C54. However, XRD indicated a structurally different intermediate phase occurs during the C49 to C54 transformation. Modeling was performed based on C11b structure (14/mmm) type, with the Ti and Si atoms arranged similarly to those in MoSi2. The unit cell was determined to be a = 4.428 Å, b = 4.779 Å, c = 9.078 Å with a Fmmm space group and total pseudo-potential plane wave calculations based on crystallographic simulations of −103.96 ev/Atom.