We report on the growth and characterization of molecular mixed thin films of α-sexithiophene (6T), a well-known organic p-type semiconductor with high hole mobility, together with its perfluorinated counterpart, the so far rarely studied tetradecafluoro-α-sexithiophene (PF6T). Pure and blended thin films of these two molecules with different mixing ratios were grown on silicon oxide in ultrahigh vacuum by coevaporation. The effect of perfluorination and mixing on crystal structure, morphology, electronic, and optical properties was examined. The evolution of the PF6T crystal structure was followed in situ in real time by X-ray scattering. We found a new thin film structure different from the reported bulk phase with molecules either standing-up or lying-down depending on the growth temperature. The different morphologies of pure films and blends were investigated with atomic force microscopy. The impact of mixing on the core-levels and on the highest occupied molecular orbitals of 6T and PF6T is discussed.