20 results
Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
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- Journal:
- MRS Advances / Volume 1 / Issue 2 / 2016
- Published online by Cambridge University Press:
- 26 January 2016, pp. 91-102
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- 2016
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Direct Observation of Stacking Fault Nucleation from Deflected Threading Dislocations with Burgers Vector c+a in PVT Grown 4H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1693 / 2014
- Published online by Cambridge University Press:
- 10 June 2014, mrss14-1693-dd01-04
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- 2014
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Effect of doping on crystalline quality of rubidium titanyl phosphate (RTP) crystals grown by the TSSG method
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1698 / 2014
- Published online by Cambridge University Press:
- 09 October 2014, mrss14-1698-jj03-07
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- 2014
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Structural Characterization of Lateral-grown 6H-SiC a/m-plane Seed Crystals by Hot Wall CVD Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1693 / 2014
- Published online by Cambridge University Press:
- 10 June 2014, mrss14-1693-dd01-03
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- 2014
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Grazing Incidence X-ray Topographic Studies of Threading Dislocations in Hydrothermal Grown ZnO Single Crystal Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1494 / 2013
- Published online by Cambridge University Press:
- 01 March 2013, pp. 121-126
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- 2013
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Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 28 May 2012, mrss12-1433-h02-04
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- 2012
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Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating Zone
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1433 / 2012
- Published online by Cambridge University Press:
- 13 June 2012, mrss12-1433-h04-14
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- 2012
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Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B02-02
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- 2010
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A Novel X-ray Diffraction –based Technique for Complete Stress State Mapping of Packaged Silicon Dies
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1158 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1158-F01-07
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- 2009
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Electronic Impact of Inclusions in Diamond
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1203 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1203-J17-19
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- 2009
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Synthesis of GaN Nanostructures at Low Temperatures by Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1080 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1080-O08-01
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- 2008
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Sublimation Growth and Defect Characterization of AlN Single Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1040 / 2007
- Published online by Cambridge University Press:
- 01 February 2011, 1040-Q03-01
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- 2007
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Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B12-03
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- 2006
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Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF30-07
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- 2005
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Crystal Growth and Defect Characterization of AlN Single Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF30-06
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- 2005
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X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.23
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- 2004
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Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds
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- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E8.24
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- 2004
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Crucible Selection in AlN Bulk Crystal Growth
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y2.9
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- 2003
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Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K2.11
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- 2002
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Single-Crystal Aluminum Nitride Substrate Preparation from Bulk Crystals
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E2.7
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- 2001
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