Complete epitaxial Si-SiGe-Si- stacks with a defined doping profile for each component have been deposited on Si substrates from the system SiH4, GeH4, H2, B2H6, PH3 by RTCVD. The deposition has been carried out at a temperature of 650°C for Si and of 500°C for SiGe, respectively, both at a pressure of 2 mbar. The developed epitaxial process including an effective H2 in-situ preclean annealing has been integrated in a simple double mesa technology for the preparation of SiGe base heterojunction bipolar transistors (HBT). Despite the simplicity of the technology and the lithographical level allowing emitter dimensions of 2.3×2.5 μm2 only, test devices on 4” wafers reached transit frequencies fT and maximum oscillation frequencies fmax of higher than 60 GHz and 30 GHz, respectively. Besides, a low base current has been measýnl as proof for a good layer quality.