Defects in oxygen-containing Czochralski silicon (Cz-Si)
subjected to 2-steps pre-annealing at 720–1000 K under
105 Pa and next treated at 1170–1400 K (HT) under
high hydrostatic pressure (HP, up to 1.2 GPa) were
investigated by photoluminescence, infrared absorption and
related methods. Microstructure of HT − HP treated Cz-Si is
critically dependent on nucleation centres for oxygen
precipitation created by pre-annealing.