Heterostructures of SiC and AlN in either sequence, AlN on SiC or SiC on AlN, were grown on Si, Al2O3, and 6H-SiC substrates by (metalorganic) chemical vapor deposition (CVD). On Si substrates, a SiC layer was first grown by a two-step technique and an AlN layer was deposited subsequently. On other substrates, an AlN layer was first grown, followed by SiC deposition. Multi-layered structures (SiC/AlN/SiC) were also produced to demonstrate the ability of heteroepitaxy of SiC and AlN on each other.
AlN grown on 3C-SiC were highly oriented polycrystalline films. AlN films on 6H-SiC, SiC films on A1N/Al2O3, and SiC films on AlN/6H-SiC were single crystal. In the latter two cases, the SiC films were in hexagonal structure. These SiC films were smooth and specular in appearance and showed n-type conductivity.