Thin ZnO films deposited on silicon and glass substrates by DC reactive magnetron sputtering were exposed to a sequence of thermal treatments at 400°C in vacuum, then in air, then in vacuum again. Photoluminescence studies of these ZnO films exited at 325 nm by He-Cd laser revealed an appearance of a photoluminescence band around 380 nm upon the annealing in vacuum.
Thin SnOx films were deposited on glass substrates by ion-beam sputtering using pure oxygen as a working gas. X-ray diffraction analysis showed that as-deposited films consist of textured SnO2- and Sn2O3-crystallites which are transformed into polycrystalline SnO2 phase at a moderate temperature near 200°C. It is shown that the growth of the SnO2 crystallite size upon the annealing is mainly due to the disappearance of an amorphous phase at 400°C and coalescence of crystallites at 600°C.