Formation of CoSi2 in Co implanted Si sample has been studied using
glancing incidence X-ray diffraction and depth resolved
positron annihilation techniques. The implanted sample exhibits near-surface amorphization in the temperature range between 300 K and 670 K. It is found that recrystallization of Si occurs at 870 K which inturn, triggers the formation of the CoSi2 phase at lower temperatures as compared to that obtained in thin film systems. The results are discussed in the light of enhanced intermixing brought by defect migration, associated with recrystallization.