We recently showed that the mRNA expression of genes encoding for specific nutrient sensing receptors, namely the free fatty acid receptors (FFAR) 1, 2, 3, and the hydroxycarboxylic acid receptor (HCAR) 2, undergo characteristic changes during the transition from late pregnancy to lactation in certain adipose tissues (AT) of dairy cows. We hypothesised that divergent energy intake achieved by feeding diets with either high or low portions of concentrate (60% v. 30% concentrate on a dry matter basis) will alter the mRNA expression of FFAR 1, 2, 3, as well as HCAR2 in subcutaneous (SCAT) and retroperitoneal AT (RPAT) of dairy cows in the first 3 weeks postpartum (p.p.). For this purpose, 20 multiparous German Holstein cows were allocated to either the high concentrate ration (HC, n=10) or the low concentrate ration (LC, n=10) from day 1 to 21 p.p. Serum samples and biopsies of SCAT (tail head) and RPAT (above the peritoneum) were obtained at day −21, 1 and 21 relative to parturition. The mRNA abundances were measured by quantitative PCR. The concentrations of short-chain fatty acid (SCFA) in serum were measured by gas chromatography-flame ionisation detector. The FFAR1 and FFAR2 mRNA abundance in RPAT was higher at day −21 compared to day 1. At day 21 p.p. the FFAR2 mRNA abundance was 2.5-fold higher in RPAT of the LC animals compared to the HC cows. The FFAR3 mRNA abundance tended to lower values in SCAT of the LC group at day 21. The HCAR2 mRNA abundance was neither affected by time nor by feeding in both AT. On day 21 p.p. the HC group had 1.7-fold greater serum concentrations of propionic acid and lower concentrations of acetic acid (trend: 1.2-fold lower) compared with the LC group. Positive correlations between the mRNA abundance of HCAR2 and peroxisome proliferator-activated receptor γ-2 (PPARG2) indicate a link between HCAR2 and PPARG2 in both AT. We observed an inverse regulation of FFAR2 and FFAR3 expression over time and both receptors also showed an inverse mRNA abundance as induced by different portions of concentrate. Thus, indicating divergent nutrient sensing of both receptors in AT during the transition period. We propose that the different manifestation of negative EB in both groups at day 21 after parturition affect at least FFAR2 expression in RPAT.

Si-doping of cubic GaN epilayers grown by an rf plasma-assisted molecular beam epitaxy on semi-insulating GaAs (001) substrates is investigated by secondary ion mass spectroscopy (SIMS), photoluminescence (PL) and by Hall-effect measurements. SIMS measurements show a homogeneous incorporation of Si in cubic GaN epilayers up to concentrations of 5*1019 cm−3. PL shows a clear shift of the donor-acceptor emission to higher energies with increasing Si-doping. Above a Si-flux of 1*1011cm−2s−1 the near band edge lines merge to one broad band due to band gap renormalization and conduction band filling effects. The influence of the high dislocation density (≈1011cm−2) in c-GaN:Si on the electrical properties is reflected in the dependence of the electron mobility on the free carrier concentration. We find that dislocations in cubic GaN act as acceptors and are electrically active.

P-type doping with Mg and n-type doping with Si of cubic GaN (c-GaN) epilayers is reported. Cubic GaN films are grown by rf-plasma assisted MBE on semi-insulating GaAs (001) substrates at a substrate temperature of 720°C. Elemental Mg and Si are evaporated from thermal effusions cells. Secondary ion mass spectroscopy (SIMS), low temperature photoluminescence (PL) and temperature dependent Hall-effect measurements are used to study the incorporation, optical and electrical properties. A Mg related shallow donor-acceptor transiton at 3.04 eV with an acceptor activation energy of EA= 0.230 eV is observed by low temperature PL. At Mg concentrations above 1018 cm−3 the dominance of a broad blue band indicates that also in c-GaN Mg is incorporated at different lattice sites or forms complexes. Si-doped c-GaN epilayers are ntype with electron concentrations up to 5*1019 cm−3. The incorporation of Si follows exactly the vapor pressure curve of Si, indicating a sticking coefficient of 1 for Si in cGaN. With increasing Si-concentration the intensity of the near-band luminescence continuously increases and broadens.

We give an update of the observations and analysis of G2 – the gaseous red emission-line object that is on a very eccentric orbit around the Galaxy's central black hole and predicted to come within 2400 RS in early 2014. During 2013, the laser guide star adaptive optics systems on the W. M. Keck I and II telescopes were used to obtain three epochs of spectroscopy and imaging at the highest spatial resolution currently possible in the near-IR. The updated orbital solution derived from radial velocities in addition to Br-γ line astrometry is consistent with our earlier estimates. Strikingly, even ∼ 6 months before pericenter passage there is no perceptible deviation from a Keplerian orbit. We furthermore show that a proposed “tail” of G2 is likely not associated with it but is rather an independent gas structure. We also show that G2 does not seem to be unique, since several red emission-line objects can be found in the central arcsecond. Taken together, it seems more likely that G2 is ultimately stellar in nature, although there is clearly gas associated with it.

It is well documented that global warming is unequivocal. Dairy production systems are considered as important sources of greenhouse gas emissions; however, little is known about the sensitivity and vulnerability of these production systems themselves to climate warming. This review brings different aspects of dairy cow production in Central Europe into focus, with a holistic approach to emphasize potential future consequences and challenges arising from climate change. With the current understanding of the effects of climate change, it is expected that yield of forage per hectare will be influenced positively, whereas quality will mainly depend on water availability and soil characteristics. Thus, the botanical composition of future grassland should include species that are able to withstand the changing conditions (e.g. lucerne and bird's foot trefoil). Changes in nutrient concentration of forage plants, elevated heat loads and altered feeding patterns of animals may influence rumen physiology. Several promising nutritional strategies are available to lower potential negative impacts of climate change on dairy cow nutrition and performance. Adjustment of feeding and drinking regimes, diet composition and additive supplementation can contribute to the maintenance of adequate dairy cow nutrition and performance. Provision of adequate shade and cooling will reduce the direct effects of heat stress. As estimated genetic parameters are promising, heat stress tolerance as a functional trait may be included into breeding programmes. Indirect effects of global warming on the health and welfare of animals seem to be more complicated and thus are less predictable. As the epidemiology of certain gastrointestinal nematodes and liver fluke is favourably influenced by increased temperature and humidity, relations between climate change and disease dynamics should be followed closely. Under current conditions, climate change associated economic impacts are estimated to be neutral if some form of adaptation is integrated. Therefore, it is essential to establish and adopt mitigation strategies covering available tools from management, nutrition, health and plant and animal breeding to cope with the future consequences of climate change on dairy farming.

Results are reported on several new glass and glass-ceramic waste formulations for plutonium disposition. The approach proposed involves employing existing calcined high level waste (HLW) present at the Idaho Chemical Processing Plant (ICPP) as an additive to: 1) aid in the formation of a durable waste form and 2) decrease the attractiveness level of the plutonium from a proliferation viewpoint. The plutonium, PuO2, loadings employed were 15 wt% (glass) and 17 wt% (glass-ceramic). Results in the form of x-ray diffraction patterns, microstructure and durability tests are presented on cerium surrogate and plutonium loaded waste forms using simulated calcined HLW and demonstrate that durable phases, zirconia and zirconolite, contain essentially all the plutonium.

Si-doping of cubic GaN epilayers grown by an rf plasma-assisted molecular beam epitaxy on semi-insulating GaAs (001) substrates is investigated by secondary ion mass spectroscopy (SIMS), photoluminescence (PL) and by Hall-effect measurements. SIMS measurements show a homogeneous incorporation of Si in cubic GaN epilayers up to concentrations of 5*1019 cm−3. PL shows a clear shift of the donor-acceptor emission to higher energies with increasing Si-doping. Above a Si-flux of 1*1011cm−2s−1 the near band edge lines merge to one broad band due to band gap renormalization and conduction band filling effects. The influence of the high dislocation density (≈1011cm−2) in c-GaN:Si on the electrical properties is reflected in the dependence of the electron mobility on the free carrier concentration. We find that dislocations in cubic GaN act as acceptors and are electrically active.

Recently we have proposed a new layer-by-layer method for deposition of group-III nitrides from elemental precursors (Ga, N2). This technique is based on a two-step cyclic process, which alternates Pulsed Laser Deposition (PLD) and nitrogen plasma treatment. We have shown that such a process allows to control independently the structure and the N-content of the growing film. The objective of this work is to develop the cyclic process for achieving high quality GaN films. We explore the opportunities to grow stoichiometric epitaxial films on different substrates at relatively low temperatures (400°C to 600°C). This will gives us the possibility to use ZnO epitaxial layers as a buffer without thermal degradation. UV- Visible transmission spectra, X-ray diffraction scans and Atomic Force Microscopy are some of the tools used to characterise and compare the deposited films.

The synthesis of multipodes based on substituted ferrocene groups and the results of the investigations of the liquid-crystalline phase properties of these materials, determined by optical polarising microscopy DSC and X-ray diffraction studies as central cores is reported.

We studied the defect properties present in rapid thermal oxidized porous silicon (RTOPS) by Electron Spin Resonance (ESR). Two different types of defects are distinguished, one similar to the ones observed in damaged c-Si, and in a-Si. The second one is probably related to the Pbo center at the Si/SiO2 interface. The minimum density of 1016 cm-3 is observed for the as etched and for the 900°C oxidized samples, but reaches a maximum of 8×1018 cm-3for the 600°C samples. The PL intensity anticorrelates with the defect densities, which shows that nonradiative recombination via defects is a very powerful channel in quenching the PL efficiency.

With optically detected electron spin resonance (ODESR) and electron nuclear double resonance (ODENDOR) the following deep level defects in s.i. LEC-grown GaAs were investigated: EL2 defects in undoped GaAs and VGa 2+ and VGa 3+ defects in V-doped GaAs. This paper summarizes the major results: (i) the double donor defect EL2 in an (AsGa-Asi +) pair defect, which is distributed rather homogeneously across an as-grown wafer. After inverted thermal conversion treatment it is destroyed, and 3 new paramagnetic defects appear. EL2 is recovered after annealing at ca. 800 °C, while the 3 new defects disappear. (ii) A new ESR spectrum due to VGa 2+ was measured. It is shown for the first time for a 3dn impurity in semiconductors that VGa 3+(3d3)is in a low spin state (S = 1/2) in accordance with recent theoretical predictions. A deep level defect at Ev + (0.2–0.4) eV is discovered, which is probably the defect needed for explaining the s.i. properties of V-doped GaAs.

Free and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

Delafossite-type CuAlO2 thin films have been deposited by radio frequency (RF) reactive sputtering on sapphire using a CuAlO2 ceramic target. A study of structural and optical properties was performed on films of varying deposition parameters such as substrate temperature and oxygen partial pressure and also post annealing. The crystalline phase in the films was identified to be the delafossite structure by x-ray diffraction. The optical properties, such as the wavelength dependence of the transmittance and the band gap, were determined. The average transmittance is 80% in the wavelength range of 400-1500 nm and the band gap is 3.81 eV.

Cd1-xZnxTe ZriTe crystals grown by the travelling heater methode (THM) have been investigated by low temperature photoluminescence (PL). The excitonic energy gap as a function of the alloy composition was determined for the complete range of x - 0 to x - 1. The composition dependent broadening of the neutral acceptor bound exciton (A°X) line was measured and compared to theoretical calculations. The Donor - Acceptor pair luminescence in the crystals is a superposition of recombinations due to residual Cu acceptors and A - centers (anion vacancy - donor pairs ).