A six mask process that yields stacked CMOS circuits is presented. Transistors that were built in reverse order (i. e. the gate first, the gate dielectric second, and only then the channel region) exhibit comparable parameters as conventional devices. A novel device has been built whose current drive is three times that of FETs built in substrate material. The vertical stacking of complementary MOS transistors made it possible to build an inverter with symmetric switching characteristic within the area of a single transistor.