Electron beam induced deposition with two noble metal precursors (Rhodium and Gold) having the same halogeno and trifluorophosphine ligands is presented. The deposit geometry of lines and freestanding bridges is discussed with respect to electron energy, beam shape, and backscattered electron distribution. Electron beam heating effects are estimated to be negligible in our deposition conditions. Using PF3AuCl, lines of percolating gold grains were deposited with electrical resistivities as low as 22μωcm at room temperature (Au: 2.2μωcm). Auger electron analysis shows about 60at% Rh in deposits obtained with [RhCI(PF3)2]2, however the resistivity of 1ωcm is high compared to 4.5μωcm of pure Rh.