Thin films of the shape memory alloy NiTi have been sputter-deposited onto ptype silicon substrates. Films that are initially amorphous may be crystallized by vacuum annealing. The crystalline films exhibit the B2->B19′ phase change associated with the shape memory effect while remaining in contact with the silicon substrate. Transition temperatures were determined by resistance measurements and x-ray diffraction. The NiTi - Si contacts are diodes, as evidenced by their current-voltage characteristics; however, the effect of the phase change on the barrier height could not be determined.