A new and simple process for the selective emitter realization was developed
on multicrystalline silicon wafers. This material is in competition with
single-crystal silicon since it is able to lead to similar performances with
a reduction in the cost of solar cell realization.
This work is centred on the study of emitter area of a photovoltaic cell and
the possibilities to obtain a selective emitter in only one step while
avoiding the use of chemicals.
This would make substantial economies on the rejections treatment which
became a capital environmental factor. A structure with selective emitter
consists of a heavy doping under the metallic contacts, leaving weak the
surface concentration between the grid lines.
This allows a good surface passivation while keeping a good contact
resistance for screen printed lines.
The advantages of such a structure could be observed by quantum efficiency
measurements yield where the benefit appears in the UV-VIS range of the