Ferroelectric characteristics of poly(vinylidiene fluoride/trifluoroethylene) (P(VDF/TrFE) (72/28 mol%)) copolymer ultrathin films used as an insulator in varying memory device architectures such as metal-ferroelectric polymer-metal (MFM), MF-insulator-semiconductor (MFIS), MIS and organic field-effect transistor (OFET) were studied using different electrical measurements. A maximum data writing speed of 1.69 MHz was calculated from the switching time measured using MFM architecture. Capacitance-voltage measured using MFIS was found to be more suitable for distinguishing the ‘0’ and ‘1’ state compared to MFM device structure. In OFET, the decreasing channel length increased the measured drain current (I
d) values as well as its memory window enabling easier identification of the ‘0’ and ‘1’ state comparable to MFIS case. The data obtained from this study will be useful in the fabrication of non-volatile random access memory (NVRAM) devices with faster data R/W/E speed and memory retention capacity.