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1 results

  • Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

  • Meg Mahat, Antonio Llopis, Richard D. Schaller, Ian Watson, Sergio Periera, Arup Neogi
  • Journal:
    MRS Communications / Volume 2 / Issue 2 / June 2012
    Published online by Cambridge University Press:
    15 June 2012, pp. 55-60
    Print publication:
    June 2012

  • Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.