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Al-Ti alloys with 72 wt% Al were employed for the realisation of ohmic contacts on 4×1019 cm-3 p-type ion implanted 4H- and 6H-SiC samples. Contact resistivity characterisations by TLM measurements were done at wafer level in the temperature range 28–290°C. Analysis of the TLM measurements took into account current crowding at the metal pads. More than half of the evaluated contact resistivity reached the minimum value detectable by the used TLM devices, that was slightly higher than 1×10-6 Ωcm2. Above this limit value, contact resistivity decreased for increasing temperature and was spread over a few decades. The maximum contact resistivity at 28°C was 2×10-4 Ωcm2, which changed to 5×10-6 Ωcm2 at 290°C. The thermal behaviour of these TLM structures featured thermionic-field emission conduction.
This study compares p-MOS capacitors fabricated on N+ implanted and on virgin 4H-SiC. The former sample have N at the SiO2/SiC interface, the latter have not. To investigate the presence of deep and shallow hole traps at the SiO2/SiC interface, high frequency and quasi-static capacitance voltage measurements under dark have been compared for bias sweeping from accumulation to depletion and from depletion to accumulation, the latter after white light illumination. The presence of N has an effect on the density of the shallow donor like traps but none effect on the deep ones. The positive charge trapped in the oxide and/or at the oxide interface after equivalent tunneling hole injection have been compared and are equivalent. Time dependent dielectric breakdown tests have been compared too. The oxide grown on N+implanted SiC broken at lower electric field.
Structural, morphological and electrical characteristics of Al-implanted p+/n 4H-SiC diodes are compared for the same implantation process and post implantation annealing with identical stationary and cooling cycles but different heating velocity. Al+ ions were implanted at 400°C, with energies in the range 250-350 keV and total fluence of 1.2×1015 cm−2. Post implantation annealing processes were done at 1600°C for 30 min with a constant heating velocity in the range 7 – 40°C/sec and an abrupt cooling cycle. Gas in the annealing ambient was high purity Ar. The Al depth profile of annealed and as implanted samples were equal except for concentrations below 10E17 cm−3 where the former profiles showed a diffusion tail. With the increase of the heating velocity of the post implantation annealing process, sheet resistance of the Al implanted layer and diode leakage currents decrease while the surface roughness increases.
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