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Red/near-infrared photoluminescence (PL) of silicon irradiated by ions for wide dose range is investigated. The results are presented obtained for doses near amorphization threshold, where PL is associated with the formation of composite structure composed of nanocrystals (quantum dots) embedded into amorphized matrix and for doses that are strongly larger than amorphization threshold. The PL in this case is caused by formation of nanocrystals due to recrystallization of amorphous layer and penetration of stresses behind the border of this layer.
The influence of the Si+ implantation dose and postimplantation annealing temperature on the photoluminescence (PL) intensity of silicon nanoinclusions in an SiO2 matrix was experimentally investigated. The way that the PL varied with dose and annealing temperature was explained on the basis of a model which takes into account the Ostwald ripening of nanocrystals and effect of the quantum dot size on the rate of radiative recombination.
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